In order to measure the intensity of modes that are transmitted inside the devices on
the silicon-on-insulator (SOI) platform, researchers usually use
pre-processed couplers to make the optical modes diffract out of the
chip. However, the output couplers have an influence
(e.g., attenuation and wavelength selectivity) on the modes of
concern. Besides, as the quantity and variety of devices integrated
into the SOI platform continue to escalate, the traditional method
also shows limits on detecting devices far from the chip edge. So, is
it feasible to directly and locally measure one specific mode’s
intensity on some waveguide-based devices like the directional
coupler, polarization beam splitter, and so on? Interference of two
coherent pump beams has the capability to induce a periodic carrier
distribution in the material, thus modulating the refractive index,
effectively creating a temporary and erasable diffraction grating. In
this study, an off-chip, non-destructive, and localized detection
method based on carrier grating is proposed. A theoretical model is
developed to calculate carrier dynamics under various pump
configurations. Leveraging the finite-difference time-domain (FDTD)
method and accounting for free carrier index (FCI) and free carrier
absorption (FCA) effects, analysis of the quantitative impact of pump
intensity and radius on the diffraction efficiency of the carrier
grating in the silicon-on-insulator (SOI) platform and its far-field
divergence characteristics is provided. Ultimately, this research
contributes to a discussion on several commonly used application
scenarios and the feasibility of experimental approaches. A spatial
resolution of less than 10 µm and a diffraction efficiency of −15dB while simultaneously maintaining a
far-field divergence of 7.8° for the SOI platform are proposed at the
end of this article.