Characterizations of ZnTe bulks grown by temperature gradient solution growth

Uen, Wu‐Yih; Chou, S; Shin, Hwa-Yuh; Liao, Sen-Mao; Lan, Shan-Ming

doi:10.1016/s0921-5107(03)00316-7

Cited by 19 publications

(11 citation statements)

References 16 publications

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“…The electrical properties of the as-grown ZnTe crystals are summarized in Table 1; the results [3] reported for ZnTe grown by the same method are also listed for comparison. Hall tests indicated that the as-grown ZnTe exhibited p-type conductivity and that its carrier concentration and mobility were in the range of 10 13 -10 14 cm −3 and 80-300 cm 2 ·V −1 ·s −1 , respectively; these results are slightly lower and higher than the previously reported results, respectively.…”

Section: Optical and Electrical Propertiesmentioning

confidence: 99%

“…For example, the growth temperature can be significantly lower than that used in melt growth; thus, problems encountered at high temperatures such as contamination from the crucible and the high zinc partial pressure would therefore be reduced. Hence, the generation of some intrinsic point defects and extended defects could be reduced [3]. Furthermore, large ZnTe crystals are more easily obtained via solution growth than via the vapor-phase growth method.…”

Section: Introductionmentioning

confidence: 99%

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Characterization and chemical surface texturization of bulk ZnTe crystals grown by temperature gradient solution growth

Yang

Wang

Liu

2015

Int J Miner Metall Mater

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Using tellurium as a solvent, we grew ZnTe ingots of 30 mm in diameter and 70 mm in length by a temperature gradient solution growth method. Hall tests conducted at 300 K indicated that the as-grown ZnTe exhibits p-type conductivity, with a carrier concentration of approximately 10 14 cm −3 , a mobility of approximately 300 cm 2 ·V −1 ·s −1 , and a resistivity of approximately 10 2 Ω·cm. A simple and effective method was proposed for chemical surface texturization of ZnTe using an HF:H 2 O 2 :H 2 O etchant. Textures with the sizes of approximately 1 μm were produced on {100}, {110}, and {111} Zn surfaces after etching. The etchant is also very promising in crystal characterization because of its strong anisotropic character and Te-phase selectivity.

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Section: Optical and Electrical Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Characterization and chemical surface texturization of bulk ZnTe crystals grown by temperature gradient solution growth

Yang

Wang

Liu

2015

Int J Miner Metall Mater

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“…Table 7. Analysis and interpretation of the PL peaks are carried out according to reference data [75][76][77][78][79][80][81][82][83][84][85][86][87][88][89]. We calculated activation energies of corresponding processes using the expression (26).…”

Section: сDte Filmsmentioning

confidence: 99%

“…Table 7 summarizes these data. Optical transitions with energy (2.381÷2.383) eV were observed in [68,[75][76][77][78][79][80][81][82][84][85][86] where authors had studied monocrystalline or bulk polycrystalline ZnTe of high structural and optical quality. These transitions are commonly relating to a free exciton (X).…”

Section: сDte Filmsmentioning

confidence: 99%

Injection and Optical Spectroscopy of Localized States in II-VI Semiconductor Films

Kurbatov¹,

Opanasyuk²,

Khlyap³

2012

Advanced Aspects of Spectroscopy

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“…The works on the ZnTe crystal growth, as conducted by Seki et al [7], Sato et al [8], Uen et al [9], and Yang et al [10] showed that the solution method is a promising way to grow ZnTe crystal with high quality because of its low growth temperature and impurity rejecting effect. Yang et al [10] introduced the accelerated crucible rotation technique (ACRT) to the temperature gradient solution growth (TGSG) method and attained high quality ZnTe crystals.…”

Section: Introductionmentioning

confidence: 99%

The Effects of ACRT on the Growth of ZnTe Crystal by the Temperature Gradient Solution Growth Technique

Yin

Wang

et al. 2017

Crystals

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Abstract:A finite element method is used here to simulate the temperature field, the thermosolutal convection, the solute segregation, and the non-isothermal phase transformation during the growth of ZnTe crystal via the temperature gradient solution growth technique (TGSG) with an accelerated crucible rotation technique (ACRT). Three different trapezoid-wave ACRT sequences are proposed, and their effects are examined from the views of the constitutional supercooling and the mixing of the solution. The solution in front of the growth interface can be fully mixed only during the constant rotation stage of the ACRT when there is a clockwise Ekman flow. An inappropriate ACRT can produce excessively strong clockwise and counterclockwise Ekman flows, and this results in constitutional supercooling in front of the central part of the growth interface at the beginning of the stop stage and in front of the peripheral part at the end of the constant rotation stage. By adjusting the acceleration rate of the ampoule rotation, the appropriate Ekman flows can be obtained to well mix the solution and avoid the constitutional supercooling. An appropriate ACRT sequence is provided, which can facilitate the mixing of the solution, avoid constitutional supercooling, and improve the growth interface morphology.

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Characterizations of ZnTe bulks grown by temperature gradient solution growth

Cited by 19 publications

References 16 publications

Characterization and chemical surface texturization of bulk ZnTe crystals grown by temperature gradient solution growth

Characterization and chemical surface texturization of bulk ZnTe crystals grown by temperature gradient solution growth

Injection and Optical Spectroscopy of Localized States in II-VI Semiconductor Films

The Effects of ACRT on the Growth of ZnTe Crystal by the Temperature Gradient Solution Growth Technique

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