Characterization of zirconium nitride films sputter deposited with an extensive range of nitrogen flow rates

Abstract

SPM oxidation and parallel writing on zirconium nitride thin films J. Vac. Sci. Technol. A 23, 846 (2005); 10.1116/1.1864052 Effect of O 2 flow ratio on the microstructure and stress of room temperature reactively sputtered RuO x thin films J. Vac. Sci. Technol. A 23, 452 (2005); 10.1116/1.1875272 Parallel writing on zirconium nitride thin films by local oxidation nanolithography Appl. Phys. Lett. 85, 5691 (2004); 10.1063/1.1833569Influence of substrate bias on practical adhesion, toughness, and roughness of reactive dc-sputtered zirconium nitride films ZrN x films are deposited by rf magnetron sputtering using a wide range of nitrogen flow rates to control film properties. Scanned probe microscope ͑SPM͒ oxidation is presented as a complimentary characterization tool to x-ray diffraction, colorimetric, and four point probe analyses. The SPM oxidation behavior of the ZrN x films is related to their structural, optical, and electrical properties. Whereas stoichiometric ZrN films have applications as protective and/or decorative coatings, ZrN x films sputtered with higher nitrogen flow rates have potential applications in devices where arrays of high aspect ratio nanostructures would be useful.

Thermal conductivity of (Zr,W)N/ScN metal/semiconductor multilayers and superlattices

“…Of several possible combinations of nitride metals and semiconductors, 11 ZrN and ScN have been selected for this study. ZrN is a metallic phase with the rocksalt structure, a bulk electrical resistivity of =24 ⍀ cm ͑for stoichiometric ZrN͒ and a melting point of 2980°C; 13,14 ScN is a rocksalt-structured semiconductor with a direct transition at the X point of 2.1 eV, a possible indirect transition from ⌫ → X corresponding to an indirect bandgap in the range of 0.9-1.6 eV, and a melting point of ϳ2600°C. [15][16][17][18][19] Most crystalline bulk and thin-film nitrides have thermal conductivities much greater than 1 W / m K. For example, the thermal conductivities measured in the present study for films of ZrN and ScN are = 47 and 10.6 W / m K, respectively.…”

Microstructure, properties and applications of Zr-carbide, Zr-nitride and Zr-carbonitride coatings: a review

“…The SPM oxidation technique was used to study the oxidation characteristics of ZrN films produced with the RF sputtering technique. 116 Films produced with 0.5 sccm or lower nitrogen flow rate appeared brighter with little oxidation. High oxide features were visible on ZrN x prepared with higher nitrogen flow rates where the deposition rate is low, the electrical resistivity is large, and the films are amorphous.…”

“…A large increase in resistivity was recorded for green colored amorphous films deposited at Z4 sccm. 116 In another study, an electrical resistivity of 11.4 mOhm cm was obtained for a ZrN film deposited on a Si substrate at an ion energy of 150-200 eV and N/Zr ratio of 1.2-1.5 using ion assisted deposition. 120,126 The ZrN coatings were deposited on steel and silicon substrates using magnetron sputtering.…”

“…110 Root mean square roughness of the ZrN films follow the I (200) /I (111) ratio. 116 Close packed planes such as (111) are smoother compared to the (200) planes. The highest roughness is recorded when a stoichiometric film is formed.…”

“…At Z4 sccm nitrogen, the color is green. 116 Dual ion beam sputtered Zr 3 N 4 has been reported to exhibit a blue color. 127 The argon flow rate has an inconsequential effect on the color of the film.…”