Abstract:Characterization of nitrogen ion implanted InGaAs photoconductive devices is performed in both the electronic and optoelectronic regime. In the dark state, the optoelectronic device shows a dark resistance of a few kΩ and a wide electrical bandwidth in the RF domain. This large bandwidth is also confirmed in the illuminated state, optoelectronic autocorrelation experiments performed with ultra-short optical pulses allow us to measure the picosecond optoelectronic time response of the device. In the second part… Show more
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