Characterization of thin-film amorphous semiconductors using spectroscopic ellipsometry

Jellison, G. E.; Merkulov, Vladimir I.; Puretzky, Alexander A.; Geohegan, David B.; Eres, Gyula; Lowndes, D. H.; Caughman, J. B. O.

doi:10.1016/s0040-6090(00)01384-5

Cited by 146 publications

(69 citation statements)

References 17 publications

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“…In addition, the experimental results were checked against PC1D[14] simulations of the cell structure. The dielectric function corresponding to the full layer stack was fitted to an optical model using the dispersion curve of monocrystalline silicon for the epi-layer, as obtained by Aspnes [15], a Tauc-Lorentz dispersion formula for the amorphous silicon layer [16], as well as layers combining these materials with a void fraction using the Bruggeman effective approximation theory [17].…”

Section: Methodsmentioning

confidence: 99%

Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF-PECVD

Cariou

Labrune

Cabarrocas

2011

Solar Energy Materials and Solar Cells

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We report on heterojunction solar cells whose thin intrinsic crystalline absorber layer has been obtained by plasma enhanced chemical vapor deposition at 165°C on highly doped p-type (100) crystalline silicon substrates. We have studied the effect of the epitaxial intrinsic layer thickness in the range from 1 to 2.4 µm. This absorber is responsible for photo-generated current whereas highly doped wafer behave like electric contact, as confirmed by external quantum efficiency measurements and simulations. A best conversion efficiency of 7% is obtained for a 2.4 µm thick cell with an area of 4 cm 2 , without any light trapping features. Moreover, the achievement of a fill factor as high as 78.6% is a proof that excellent quality of the epitaxial layers can be produced at such low temperatures.

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Section: Methodsmentioning

confidence: 99%

Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF-PECVD

Cariou

Labrune

Cabarrocas

2011

Solar Energy Materials and Solar Cells

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“…The ellipsometric angles ∆ and Ψ were measured at an incident angle of 70°to the silicon substrate in the wavelength range 400 -700 nm. The thickness of the films were determined by fitting the ellipsometric data to a Tauc-Lorentz model [19][20][21]. Surface morphology analysis was performed using high resolution optical microscopy (Leica Reichert MEF4M with 1000× magnification) and scanning electron microscopy (Philips-FEI XL 30 ESEM with 4000× magnification).…”

Section: Bdd Electrodes Synthesismentioning

confidence: 99%

Application of BDD thin film electrode for electrochemical decomposition of heterogeneous aromatic compounds

et al. 2012

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Abstract:The aim of the presented study is to investigate the applicability of electrochemical oxidation of aromatic compounds containing heteroatoms, e.g. waste from production of pesticides or pharmaceutics, at a borondoped diamond (BDD) electrode. The BDD electrodes were synthesized by microwave plasma enhanced chemical vapour deposition (MW PE CVD). Investigation of the electrode surface by optical microscopy and scanning electron microscopy (SEM) confirmed that the synthesized layer was continuous and formed a densely packed grain structure with an average roughness of less than 0 5 µm. The influence of important electrochemical parameters: current density, kind of reactor, pH or mixing operation, on the efficiency of the oxidation was investigated. The fouling of electrode's surface caused by the deposition of organic material was observed during CV and galvanostatic experiments. At low current density the oxidation rate constant k was low, but the current efficiency was relatively high. The BDD can be used successfully to remove heterogeneous aromatic compounds existing either as molecules or cations. During 4 h of electrolysis 95% of aromatic compounds were electrochemically decomposed to mineral forms. It was observed that the influence of the initial pH on mineralization was marginal. PACS

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“…[29][30][31] When multiple transitions are possible in the material, additional Tauc-Lorentz oscillators can be added to the parametrization. 32 To model the high-resistive Ta 3 N 5 phase, we used a double Tauc-Lorentz model with the imaginary part of the dielectric function ͑ 2 ͒ given by…”

Section: Semiconductive Tan X Filmsmentioning

confidence: 99%

Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition

Langereis

Knoops

Mackus

et al. 2007

Journal of Applied Physics

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Remote plasma atomic layer deposition (ALD) of TaNx films from Ta[N(CH3)2]5 and H2, H2-N2, and NH3 plasmas is reported. From film analysis by in situ spectroscopic ellipsometry and various ex situ techniques, data on growth rate, atomic composition, mass density, TaNx microstructure, and resistivity are presented for films deposited at substrate temperatures between 150 and 250°C. It is established that cubic TaNx films with a high mass density (12.1gcm−3) and low electrical resistivity (380μΩcm) can be deposited using a H2 plasma with the density and resistivity of the films improving with plasma exposure time. H2-N2 and NH3 plasmas resulted in N-rich Ta3N5 films with a high resistivity. It is demonstrated that the different TaNx phases can be distinguished in situ by spectroscopic ellipsometry on the basis of their dielectric function with the magnitude of the Drude absorption yielding information on the resistivity of the films. In addition, the saturation of the ALD surface reactions can be determined by monitoring the plasma emission, as revealed by optical emission spectroscopy.

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Characterization of thin-film amorphous semiconductors using spectroscopic ellipsometry

Cited by 146 publications

References 17 publications

Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF-PECVD

Thin crystalline silicon solar cells based on epitaxial films grown at 165°C by RF-PECVD

Application of BDD thin film electrode for electrochemical decomposition of heterogeneous aromatic compounds

Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition

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