Characterization of thick epitaxial GaAs layers for X-ray detection

Samic, H.; Sun, G.C.; Nghia, Nguyen Xuan; Gandouzi, M.; Zazoui, M.; Bourgoin, J. C.; El-Abbassi, H.; Rath, Saroj Kumar; Sellin, P.J.

doi:10.1016/s0168-9002(02)00953-1

Cited by 17 publications

(13 citation statements)

References 12 publications

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“…The very low dark current density in [5] Although each of our three samples with partially etched diodes show reasonably uniform dark currents, the mean dark currents from the three samples do differ in magnitude. While this observation is consistent with previous works [1][2][3], there has been no discussion on this in the literature. Hence it is worthwhile analyzing our data for partially etched diodes further.…”

Section: Discussionsupporting

confidence: 92%

“…The very thick (> 100 µm) epitaxially grown GaAs p-i-n diodes of [1] and [2] were produced using wet chemical partial etching without passivation for the mesa. They exhibited dark current density of between 300 nA/cm 2 to 500 µA/cm 2 .…”

Section: Proofs Jinst_004t_0514mentioning

confidence: 99%

“…When compared with elemental semiconductors such as Si and Ge, compound semiconductors can be grown with a wide range of physical properties allowing customisation for different applications. Among the III-V compound semiconductors, GaAs has been the most intensively investigated for X-ray detection [1][2][3][4][5][6]. Its moderately large band gap (1.42 eV) and electron-hole pair creation energy (4.184 ± 0.025 eV [7]) enables room temperature operation, with a potential Fano-limited energy resolution of 129 eV (full-width-halfmaximum, FWHM) at 5.9 keV, as calculated using values of pair creation energy and Fano factor from [7].…”

Section: Introductionmentioning

confidence: 99%

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Fabrication study of GaAs mesa diodes for X-ray detection

Lees

Barnett

et al. 2014

J. Inst.

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A study of leakage currents using GaAs mesa p-i-n diodes for X-ray photon counting is presented. Different wet chemical etching solution and etch depth were used in the fabrication of these mesa diodes. Low and uniform leakage currents were achieved when the diode fabrication used (i) a combination of main etching solution and finishing etching solution for the etching, and (ii) partially etched mesas. The diodes fabricated using these methods showed well-defined X-ray peaks when illuminated with an 55 Fe radioisotope source.

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Section: Discussionsupporting

confidence: 92%

Section: Proofs Jinst_004t_0514mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Fabrication study of GaAs mesa diodes for X-ray detection

Lees

Barnett

et al. 2014

J. Inst.

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“…A semiconductor material to be used in the sensing portion of an x-ray detector should meet the following requirements [2,17]. It should have a large atomic number Z , because x-ray absorption grows with Z .…”

Section: Selection Of a Sensing Materialsmentioning

confidence: 99%

“…Thick epitaxial GaAs films are mostly grown by liquid-phase epitaxy [18,28] or chemical vapor deposition [6,17,30], particularly metal-organic one. Liquidphase epitaxy can yield films up to 150-250 µm thick, but these tend to show an undulating surface.…”

Section: Selection Of a Sensing Materialsmentioning

confidence: 99%

GaAs Pixel-Detector Technology for X-ray Medical Imaging: A Review

2005

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An attempt is made to analyze and summarize the literature data on hybrid x-ray GaAs pixel detectors designed for medical imaging. Criteria are stated for selecting a semiconductor material. It is shown that GaAs is currently preferable to the other semiconductor materials. Detector figures of merit used to select a semiconductor material and a process technology are listed. Major types of x-ray detector based on bulk-grown or epitaxial GaAs are described, namely, the planar Schottky, the planar p-i-n, and the 3D detector. The influence is considered of different process steps (contact formation, passivation coating, hybridization, etc.) on detector figures of merit. Monolithic technology is briefly discussed.

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