2014
DOI: 10.1209/0295-5075/105/37001
|View full text |Cite
|
Sign up to set email alerts
|

Characterization of the quantized Hall insulator phase in the quantum critical regime

Abstract: The conductivity σ and resistivity ρ tensors of the disordered Hofstadter model are mapped as functions of Fermi energy EF and temperature T in the quantum critical regime of the plateau-insulator transition (PIT). The finite-size errors are eliminated by using the noncommutative Kubo-formula. The results reproduce all the key experimental characteristics of this transition in Integer Quantum Hall (IQHE) systems. In particular, the Quantized Hall Insulator (QHI) phase is detected and analyzed. The presently ac… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

4
21
0

Year Published

2016
2016
2018
2018

Publication Types

Select...
5
3

Relationship

3
5

Authors

Journals

citations
Cited by 16 publications
(25 citation statements)
references
References 62 publications
4
21
0
Order By: Relevance
“…Similar disorder-driven anti-levitation scenario was already hinted in earlier numerical calculations [13,14].…”
supporting
confidence: 81%
“…Similar disorder-driven anti-levitation scenario was already hinted in earlier numerical calculations [13,14].…”
supporting
confidence: 81%
“…Numerical applications of the Kubo-formula with dissipation can be found in Refs. [27,48,54,55], which focused on the critical behavior of the transport coefficients of disorder topological insulators.…”
Section: The Current-current Correlation Measurementioning
confidence: 99%
“…As we have seen above, this is absolutely necessary in order to understand the quantum critical regime. More specifically, the simulations reported in [27] were based on the finite-temperature Kubo-formula written in Eq. (30) and simplified to the so called relaxation time approximation.…”
Section: Introductionmentioning
confidence: 99%
“…Given these inputs, a controlled and exponentially fast (w.r.t. crystal's size) converging numerical implementation of the formalism has been developed in [11,12] and, for simple models of disordered crystals, applications can be found in [13,14,15,16]. The transport formalism and its numerical implementation has been extended in [17] to other aperiodic systems, such as incommensurately layered materials.…”
Section: Introductionmentioning
confidence: 99%