Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions
Xiomara Ribero-Figueroa,
Anibal Pacheco-Sanchez,
Aida Mansouri
et al.
Abstract:Graphene field-effect transistors exhibit negligible transconductance under two scenarios: for any gate-to-source voltage when the drain-to-source voltage is set to zero, and for an arbitrary drain-to-source voltage provided that the gate-to-source voltage equals the Dirac voltage. Hence, extracting the channel and the parasitic series resistances from S-parameters under these conditions enables analyzing their dependence on the gate and drain biases. This is fundamental to assess the portion of the output res… Show more
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