Characterization of the Co-Silicide Penetration Depth into the Junction Area for 0.15 and Sub-0.15 Micron CMOS Technology

Lee, Hi‐Deok; Bae, Misuk; Ji, Hee−Hwan; Lee, Key-Min; Park, Seong‐Hyun; Jang, Myoung-Jun; Lee, Joo‐Hyoung; Yoon, Ki‐Seok; Choi, Jong-Young; Park, Geun-Suk; Kang, Keun-Koo; Park, Youngjin

doi:10.1143/jjap.41.2445

Cited by 6 publications

(2 citation statements)

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“…Transition metal silicides are used as low-resistivity materials in complementary metal-oxide-semiconductor (CMOS) devices. Titanium silicide (TiSi 2 ) [1][2][3] and cobalt silicide (CoSi 2 ) [4][5][6] are commonly used for microelectronic applications such as the contact of the source/drain and the gate electrode. Nickel monosilicide (NiSi) is applied as an attractive material in advanced CMOS devices.…”

Section: Introductionmentioning

confidence: 99%

Phase State Analysis of Nickel Silicides in Complementary Metal–Oxide–Semiconductor Device Using Plasmon Energy Map

Terada¹,

Hirano²,

Hashikawa

et al. 2009

jjap

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Phase states of nickel silicides in a complementary metal-oxide-semiconductor (CMOS) device were investigated using energy-filtering transmission electron microscopy (EF-TEM). Differences in plasmon energy at each location of the device were identified in two dimensions using a plasmon energy map to analyze the phase states of nickel silicides. We determined that the near side of polycrystalline silicon (poly-Si) corresponds to the NiSi phase in the gate electrode and that the contact corresponds to the NiSi 2 phase, although determining the different phase states of nickel silicides using the contrast of a TEM image was difficult.

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Section: Introductionmentioning

confidence: 99%

Phase State Analysis of Nickel Silicides in Complementary Metal–Oxide–Semiconductor Device Using Plasmon Energy Map

Terada¹,

Hirano²,

Hashikawa

et al. 2009

jjap

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“…Due to its low resistivity, no line-width dependence and high thermal stability it is a good material for Salicide Technology in CMOS devices integration. The scaling down below 90 nm technology nodes is challenging due to the trade off between low sheet resistance and low junction leakage current; the latter being the most critical aspect of cobalt silicide integration [1][2][3][4][5][6][7][8]. Since the development of the TiSi 2 technology one of the most used salicide options is the use of an ion implantation before metal deposition [9][10][11][12][13][14][15][16][17][18].…”

Section: Introductionmentioning

confidence: 99%