Characterization of surface-undoped In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP high electron mobility transistors

Pao, Y.C.; Nishimoto, C.; Majidi-Ahy, R.; Archer, J.; Bechtel, Nina; Harris, James S.

doi:10.1109/16.59905

Cited by 43 publications

(4 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…duced. In [12] it was observed experimentally that the I-V characteristics of a related device were similar, independent of whether or not the cap layer was doped. Some softening of the I-V characteristics was noted when the cap layer was doped but qualitatively the results were similar.…”

Section: Two-dimensional Resultsmentioning

confidence: 98%

“…Some softening of the I-V characteristics was noted when the cap layer was doped but qualitatively the results were similar. It was noted in [12] that through penetration of the metalization of the source and drain direct contact to the 2-DEG in the channel was achieved. The contacts were, as a result, ohmic with a reported resistance of approximately 0.3 fl.…”

Section: Two-dimensional Resultsmentioning

confidence: 99%

“…This is a result of a grading, in the source-drain direction, of the barrier associated with the interfaces between the InGaAs cap layer and channel, and the AllnAs gate isolation layer. This grading is introduced, as previously discussed, to represent the obliteration of these inter- lO-S FIGURE 12 Comparison of classical and quantum corrected density distributions in a plane normal to the device surface halfway between the source contact and gate recess.…”

Section: Distance (Angstroms)mentioning

confidence: 99%

See 2 more Smart Citations

Electron Transport Using the QuantumCorrected Hydrodynamic Equations

Kreskovsky

Grubin

1995

VLSI Design

View full text Add to dashboard Cite

Transport in one- and two-dimensional semiconductor device structures is considered using a set of quantum corrected hydrodynamic equations. Simple one-dimensional simulations demonstrate the need to include quantum effects in structures with sharp interfaces. Application to a two-dimensional quantum well HEMT structure is then considered. A brief discussion of the computational procedure is also presented.

show abstract

Section: Two-dimensional Resultsmentioning

confidence: 98%

Section: Two-dimensional Resultsmentioning

confidence: 99%

Section: Distance (Angstroms)mentioning

confidence: 99%

See 1 more Smart Citation

Electron Transport Using the QuantumCorrected Hydrodynamic Equations

Kreskovsky

Grubin

1995

VLSI Design

View full text Add to dashboard Cite

show abstract

“…Therefore, instead of peaking in a narrow region the electric field is spread at lower values towards the drain. The lower maximum field strength results in a considerable increase in breakdown voltage [7].…”

Section: Introductionmentioning

confidence: 99%

High Performance Double Recessed Al0,2Ga0,8As/In0,25Ga0,75As PHEMTs for Microwave Power Applications

Marsetz

Hulsmann

Kleindienst

et al. 1997

1997 27th European Microwave Conference

View full text Add to dashboard Cite

Double recessed T-gate Alo.2GaO.8As/InO25GaO75As pseudomorphic HEMTs with 0.3 pm gate length and different upper recess widths have been processed and analyzed. Systematic investigations concerning the correlation between drain ledge, breakdown voltage and power performance have been carried out. An optimum upper recess width has been identified which yields to a high drain-source breakdown voltage of about 24 V. A state of the art saturated output power density of 1080 mW/mm at 2 GHz is demonstrated under CW-mode of operation. DC and power measurements are performed on wafers which are not thinned. INTRODUCTIONFor power applications, e.g. in mobile or satellite communication systems, FETs with high gain, high power added efficiency (PAE) and high output power density are required. To achieve a higher output power density it

show abstract

Fabrication of pin/hemt receiver oeics for Gb/s lightwave systems on three‐inch diameter inp substrate

Yano

Doguchi

Murata

et al. 1994

Electron Comm Jpn Pt II

View full text Add to dashboard Cite

Receiver optoelectronic integrated circuits (OEICs) have been successfully designed on a three‐inch diameter InP substrate. Epitaxial layers grown by OMVPE on three‐inch diameter InP substrates showed good uniformity of electrical and optical properties. By using the epitaxial layers, transimpedance‐type receiver OEICs were fabricated. the receiver OEICs over a three‐inch diameter InP substrate showed an average bandwidth of 2.78 GHz with a standard deviation of 280 MHz. the receiver also exhibited a transimpedance of 61.1 dB and a sensitivity of ‐24.9 dBm for 2.4 Gb/s input signals. These results indicate that the receiver OEICs designed on a three‐inch diameter InP substrate are ready for practical use in Gb/s lightwave systems.

show abstract

Characterization of surface-undoped In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/InP high electron mobility transistors

Cited by 43 publications

References 9 publications

Electron Transport Using the QuantumCorrected Hydrodynamic Equations

Electron Transport Using the QuantumCorrected Hydrodynamic Equations

High Performance Double Recessed Al0,2Ga0,8As/In0,25Ga0,75As PHEMTs for Microwave Power Applications

Fabrication of pin/hemt receiver oeics for Gb/s lightwave systems on three‐inch diameter inp substrate

Contact Info

Product

Resources

About