Characterization of surface oxidation layers on ultrathin NbTiN films

Zhang, Lu; You, Lixing; Ying, Liliang; Peng, Wei; Wang, Zhen

doi:10.1016/j.physc.2017.10.008

Cited by 16 publications

(12 citation statements)

References 12 publications

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“…Furthermore, we accounted for an effective reduction of the nominal thickness due to surface sputtering during He ion irradiation as derived in Section 3.2 and for a native NbTiN oxide of 1.3 nm thickness. [ 55 ] The switching current density of our non‐irradiated NbTiN detectors is comparable to the data Korneeva et al. [ 56 ] present for 5.8 nm thick NbN devices.…”

Section: Resultssupporting

confidence: 87%

“…Furthermore, we accounted for an effective reduction of the nominal thickness due to surface sputtering during He ion irradiation as derived in Section 3.2 and for a native NbTiN oxide of 1.3 nm thickness. [55] The switching current density of our non- A strong dependence of I sw on the film thickness is apparent throughout the whole fluence range studied. The inset shows the switching current density j sw as calculated from I sw and the wire width and thickness, accounting for an effective thickness reduction due to surface sputtering during He ion irradiation as well as a 1.3 nm thick native NbTiN oxide.…”

Section: Performance Of He Ion Irradiated Snspdsmentioning

confidence: 67%

See 1 more Smart Citation

Site‐Selective Enhancement of Superconducting Nanowire Single‐Photon Detectors via Local Helium Ion Irradiation

Strohauer,

Wietschorke,

Zugliani

et al. 2023

Adv Quantum Tech

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Achieving homogeneous performance metrics between nominally identical pixels is challenging for the operation of arrays of superconducting nanowire single‐photon detectors (SNSPDs). Here, local helium ion irradiation is utilized to post‐process and tune single‐photon detection efficiency, switching current, and critical temperature of individual devices on the same chip. For 12 nm thick highly absorptive SNSPDs, which are barely sensitive to single photons with a wavelength of 780 nm prior to He ion irradiation, an increase of the system detection efficiency from <0.05% to (55.3 1.1)% is observed following irradiation. Moreover, the internal detection efficiency saturates at a temperature of 4.5 K after irradiation with 1800 ions nm−2. Compared to 8 nm SNSPDs of similar detection efficiency, a doubling of the switching current (to 20 µA) is observed for irradiated 10 nm thick detectors, increasing the amplitude of detection voltage pulses. Investigations of the scaling of superconducting thin film properties with irradiation up to a fluence of 2600 ions nm−2 revealed an increase of sheet resistance and a decrease of critical temperature towards high fluences. A physical model accounting for defect generation and sputtering during helium ion irradiation is presented and shows good qualitative agreement with experiments.

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“…Furthermore, we accounted for an effective reduction of the nominal thickness due to surface sputtering during He ion irradiation as derived in Section 3.2 and for a native NbTiN oxide of 1.3 nm thickness. [ 55 ] The switching current density of our non‐irradiated NbTiN detectors is comparable to the data Korneeva et al. [ 56 ] present for 5.8 nm thick NbN devices.…”

Section: Resultssupporting

confidence: 87%

“…Furthermore, we accounted for an effective reduction of the nominal thickness due to surface sputtering during He ion irradiation as derived in Section 3.2 and for a native NbTiN oxide of 1.3 nm thickness. [55] The switching current density of our non- A strong dependence of I sw on the film thickness is apparent throughout the whole fluence range studied. The inset shows the switching current density j sw as calculated from I sw and the wire width and thickness, accounting for an effective thickness reduction due to surface sputtering during He ion irradiation as well as a 1.3 nm thick native NbTiN oxide.…”

Section: Performance Of He Ion Irradiated Snspdsmentioning

confidence: 67%

Site‐Selective Enhancement of Superconducting Nanowire Single‐Photon Detectors via Local Helium Ion Irradiation

Strohauer,

Wietschorke,

Zugliani

et al. 2023

Adv Quantum Tech

View full text Add to dashboard Cite

show abstract

“…Examples of these measurements corresponding to samples SA and SGF are illustrated in figure 1, together with fits using the GenX software [27]. For all the samples, the fit confirms total layer thickness around 11 nm (see precise values and error bars in and TiO2 demixing are known to occur in NbTiN thin films, but experiments as a function of time show a saturation so that it remains a surface phenomenon [28]. Furthermore, due to the hydrophilic nature of the material, a further improvement of the fit is observed when assuming the presence of a layer of H2O at the surface (see figure 1).…”

Section: Materials Characterizationmentioning

confidence: 81%

Improvement of the critical temperature of NbTiN films on III-nitride substrates

Machhadani

Zichi

Bougerol

et al. 2019

Supercond. Sci. Technol.

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In this paper, we study the impact of using III-nitride semiconductors (GaN, AlN) as substrates for ultrathin (11 nm) superconducting films of NbTiN deposited by reactive magnetron sputtering. The resulting NbTiN layers are (111)-oriented, fully relaxed, and they keep an epitaxial relation with the substrate. The higher critical superconducting temperature (Tc = 11.8 K) was obtained on AlN-on-sapphire, which was the substrate with smaller lattice mismatch with NbTiN. We attribute this improvement to a reduction of the NbTiN roughness, which appears associated to the relaxation of the lattice misfit with the substrate. On AlN-on-sapphire, superconducting nanowire single photon detectors (SNSPDs) were fabricated and tested, obtaining external quantum efficiencies that are in excellent agreement with theoretical calculations.

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“…Figure 5 shows XPS spectra of Nb 3d and Ti 2p of the TiNbN coating. The fitted Nb 3d spectra depicted in Figure 5a indicate that the major peaks representing Nb 3d 5/2 and Nb 3d 3/2 can be ascribed to the formation of Nb 2 O 5 , NbN, and NbO [31,32,35]. The Ti 2p fitted spectra in Figure 5b reveal the existence of TiN [36].…”

Section: X-ray Photoelectron Spectroscopy Analysismentioning

confidence: 99%

Corrosion Behavior and Conductivity of TiNb and TiNbN Coated Steel for Metallic Bipolar Plates

et al. 2019

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To improve corrosion resistance and electronic conductivity of bipolar plates for proton exchange membrane fuel cell (PEMFC), coatings of TiNb and TiNbN on 316L stainless steel (SS) were prepared by magnetron sputtering. X-ray diffraction (XRD) measurements confirmed the existence of metallic nitrides in the TiNbN coating. Scanning electron microscope (SEM) tests showed that the deposited coatings provided smooth surfaces. Further electrochemical measurements indicated that the corrosion resistance of TiNb coating was significantly higher than that of substrate. At 0.19 V vs MSE, the long-term stabilized current density of TiNb/316L SS was lower than 1 μA·cm−2. The interfacial contact resistance (ICR) values between coating and carbon paper suggested that TiNb and TiNbN films had better contact conductivity than 316L SS substrate. In conclusion, TiNb coated 316L SS metallic bipolar plate material is a promising option for PEMFC.

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Characterization of surface oxidation layers on ultrathin NbTiN films

Cited by 16 publications

References 12 publications

Site‐Selective Enhancement of Superconducting Nanowire Single‐Photon Detectors via Local Helium Ion Irradiation

Site‐Selective Enhancement of Superconducting Nanowire Single‐Photon Detectors via Local Helium Ion Irradiation

Improvement of the critical temperature of NbTiN films on III-nitride substrates

Corrosion Behavior and Conductivity of TiNb and TiNbN Coated Steel for Metallic Bipolar Plates

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