2019
DOI: 10.1016/j.arabjc.2016.11.008
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Characterization of surface changes on silicon and porous silicon after interaction with hydroxyl radicals

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Cited by 10 publications
(7 citation statements)
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“…For comparison, the contact angle on a flat silicon substrate and a micropillared silicon, which was soaked in a HF solution (10 wt %), was also measured. Soaking in HF solution was to remove the oxide layer on the surface, making the surface hydrogen-terminated, exhibiting hydrophobicity. As shown in Figure , the apparent contact angle on the HF-treated flat silicon substrate is approximately 89°. It increases to approximately 145° on the HF-treated micropillared substrate.…”
Section: Resultsmentioning
confidence: 99%
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“…For comparison, the contact angle on a flat silicon substrate and a micropillared silicon, which was soaked in a HF solution (10 wt %), was also measured. Soaking in HF solution was to remove the oxide layer on the surface, making the surface hydrogen-terminated, exhibiting hydrophobicity. As shown in Figure , the apparent contact angle on the HF-treated flat silicon substrate is approximately 89°. It increases to approximately 145° on the HF-treated micropillared substrate.…”
Section: Resultsmentioning
confidence: 99%
“…In contrast to the hydrophobic nature of the HF-treated silicon surface, the silicon surface treated by soaking in hydrogen peroxide (H 2 O 2 ) exhibits hydrophilicity. Soaking in H 2 O 2 solution makes the surface hydrophilic because of the presence of silanol groups (Si–OH). In a hydrophilic regime, the hydrodynamics of the droplet deposited on a rough surface depends significantly on the intrinsic wettability and surface morphology. The intrinsic wettability (i.e., equilibrium contact angle θ e ) and surface morphology determine an apparent contact angle θ* and a critical angle θ c .…”
Section: Resultsmentioning
confidence: 99%
“…Modification of the surface properties can happen due to the interaction of OH radicals with the ice nucleating surface via etching and increment of hydrophilicity (inversely related to contact angle). Yet, excess O 3 can cause oxidation of Hg­(I), without creating a favorable ice nucleating surface.…”
Section: Resultsmentioning
confidence: 99%
“…According to several studies [17][18][19], the value of the contact angle ensuring a successful assembly is in the range from 30° to 75°. In the PS case, such conditions can be set by reducing the free surface energy using surfactants [20] or changing the template wetting behavior by oxidation [21], oxygen plasma treatment [22], or functionalization [23]. The contact angle of the standard PS samples looks to be smaller than the contact angle of RIE-treated samples, but it shows the same behavior in dependence on the current density, i.e., the PS hydrophobicity increases with the increase of current density.…”
Section: Surface Wettabilitymentioning
confidence: 99%
“…According to several studies [17][18][19], the value of the contact angle ensuring a successful assembly is in the range from 30 • to 75 • . In the PS case, such conditions can be set by reducing the free surface energy using surfactants [20] or changing the template wetting behavior by oxidation [21], oxygen plasma treatment [22], or functionalization [23].…”
Section: Surface Wettabilitymentioning
confidence: 99%