Characterization of Strain Due to Nitrogen Doping Concentration Variations in Heavy Doped 4H-SiC

Yang, Yu; Guo, Jianqiu; Raghothamachar, Balaji; Chan, Xiaojun; Kim, Tae Jin; Dudley, Michael

doi:10.1007/s11664-017-5846-5

Cited by 10 publications

(9 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The intensities of the FTA mode and FTO mode of the SF region are lower than those of the SF-free region, indicating structural distortions in the SF region. Because the growth-facet region has a higher N concentration , and thus a higher free-electron concentration, the peak position of FLO in the facet region should shift to higher wavenumbers . Therefore, the FLO-peak mapping is used to investigate the distribution of SFs along the growth facet of the vertically sliced n -type 4H-SiC sample.…”

Section: Resultsmentioning

confidence: 99%

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules

et al. 2023

View full text Add to dashboard Cite

The generation and expansion of stacking faults (SFs) during the physical-vapor-transport (PVT) growth of n-type 4H-SiC single-crystal boules are investigated by combining photochemical etching, transmission electron microscopy, microphotoluminescence, and micro-Raman investigations. SFs with the Si−C bilayer stacking sequence of (3,3) in Zhdanov's notation are found near the seed crystal of the n-type 4H-SiC. Interestingly, we find that the facet region of the n-type 4H-SiC single-crystal boule is free of SFs (3,3). Most of the SFs (3,3) are constrained in the nonfaceted region of n-type 4H-SiC. Micro-Raman analysis indicates that the shear stress exerted in the nonfacet region gives rise to the formation and expansion of SFs (3,3), which releases the shear stress during the PVT growth of n-type 4H-SiC single-crystal boules. Due to the differences of nitrogen concentrations and growth velocities between the facet and nonfacet regions of the n-type 4H-SiC single-crystal boule, high compressive stress appears in the interface of the facet and nonfacet regions, which impedes the expansion of SFs (3,3). Furthermore, the shear stress in the facet region of a PVT-grown n-type 4H-SiC single-crystal boule is nearly zero, which eliminates the generation and expansion of SFs in the 4H-SiC single-crystal boule.

show abstract

Section: Resultsmentioning

confidence: 99%

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules

et al. 2023

View full text Add to dashboard Cite

show abstract

“…On the other hand, doping, another key to the performance, is generally categorized by researchers as intentional doping and unintentional doping [22]. Traditionally, intentional doping has been employed to introduce impurities and modulate the conductivity of 4H-SiC [26,27]. For instance, p-type semiconductors can be obtained by doping with aluminum, boron, or gallium, while the introduction of impurities such as nitrogen and phosphorus result in n-type semiconductors [28][29][30].…”

Section: Introductionmentioning

confidence: 99%

Advances and challenges in 4H silicon carbide: defects and impurities

Yang,

Tong,

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

Under the impetus of global carbon peak and carbon neutrality goals, a new generation of semiconductor material is urgently needed in various aspects of power electronic systems. In comparison to traditional semiconductor materials like single-crystal silicon, the outstanding characteristics of 4H silicon carbide (4H-SiC) have gradually positioned it as a crucial semiconductor material for emerging power semiconductor applications. Given the significance of impurities and defects in the semiconductor, comprehensive and in-depth understanding of impurities and defects about 4H-SiC plays a crucial guiding role. This paper, building upon a brief overview of the current state of 4H-SiC research, summarizes the experimental and theoretical advancements in the study of defects and impurities about 4H-SiC in recent years. Besides, we also systematically review the categories of defects in 4H-SiC, introduce methods for characterizing and identifying defects in 4H-SiC, and thoroughly discuss potential doping technologies in 4H-SiC. Challenges faced in the research of defects and impurities are ﬁnally outlined.

show abstract

“…[1] This study investigated a bulk growth process adjustment that was intended to reduce the incidence of conformational stability loss, with focus on an examination of the spatial distributions of dislocations and nitrogen doping, which have been identified as potential origins of internal strain. [2,3]…”

Section: Introductionmentioning

confidence: 99%

Improvement of the Conformational Stability of 150 mm 4H SiC Wafers

Manning¹,

Searson²,

Moeggenborg³

et al. 2023

SSP

View full text Add to dashboard Cite

A method for mitigating loss of conformational stability in 150 mm n-type 4H SiC wafers was investigated. Modifications to the physical vapor transport (PVT) process used to grow the parent bulk crystals, combined with post-growth thermal treatment, were examined as means of reducing the internal stresses hypothesized to promote instability. The magnitude of the stresses was analyzed by mechanically thinning sets of wafers produced from each process to determine the critical thickness of stability loss. The average critical thickness was found to be reduced by 13% via growth cell modification, at a reduced level of thermal treatment relative to a control process, with all wafers becoming unstable greater than 30 μm below the minimum recorded production thickness. Assessment of the spatial uniformity of dislocations indicated that lower conformational stability corresponded to elevated densities of basal plane dislocations (BPDs) and threading edge dislocations (TEDs) at the wafer edge relative to the center.

show abstract

Characterization of Strain Due to Nitrogen Doping Concentration Variations in Heavy Doped 4H-SiC

Cited by 10 publications

References 12 publications

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown n-Type 4H-SiC Single-Crystal Boules

Advances and challenges in 4H silicon carbide: defects and impurities

Improvement of the Conformational Stability of 150 mm 4H SiC Wafers

Contact Info

Product

Resources

About