Characterization of sputtered NiO thin films

Chen, Hao-Long; Lu, Yang‐Ming; Hwang, Weng-Sing

doi:10.1016/j.surfcoat.2004.10.032

Cited by 254 publications

(126 citation statements)

References 13 publications

Supporting

Mentioning

111

Contrasting

Order By: Relevance

“…The sputtering condition was chosen based on the literature. [34][35][36] The crystal structure of NiO x layers was characterized by X-ray diffraction (XRD) (Rigaku Co., Tokyo Japan, XRD SmartLab), while the flatness and thickness of these layers were characterized by a stylus profilometer (Kosaka Laboratory Ltd., Tokyo, Japan, ET200-S). The roughness on the surface of the NiO x layer was confirmed by a scanning atomic force microscope (Shimadzu co., Kyoto, Japan, SPM-9700) and scanning electron microscope (SEM) at 5 kV accelerating voltage (Hitachi, S-4800).…”

Section: Methodsmentioning

confidence: 99%

Effect of Carrier Transport in NiO on the Photovoltaic Properties of Lead Iodide Perovskite Solar Cells

et al. 2017

View full text Add to dashboard Cite

The effect of the NiO x thickness on the photovoltaic properties in planar type lead iodide perovskite solar cells consisted of Tin-doped indium oxide (ITO)/NiO x /Perovskite/Phenyl-C61-Butyric-Acid-Methyl Ester (PCBM)/Ag was investigated. For films ranging from 35 nm to 120 nm in the thickness, the NiO x thickness was found to be not crucial in fill factor and open circuit voltage. Calculations of the carrier flux in NiO x , estimated from Einstein-Smoluchowski relation and Fick's first law, found the carrier transport ability of the NiO x to fully compensate the photo-generated current density in perovskite layers and the theoretical current density ca. 26 mA cm −2 . The favorable physical properties such as mobility and thickness were also estimated for effective carrier transport in perovskite solar cells assuming that the carrier density is 10 15 cm −3.

show abstract

Section: Methodsmentioning

confidence: 99%

Effect of Carrier Transport in NiO on the Photovoltaic Properties of Lead Iodide Perovskite Solar Cells

et al. 2017

View full text Add to dashboard Cite

show abstract

“…3. The difference of resistivity can be explained by Chen et al report describing that resistivity could be decreased with increasing substrate temperature [11]. Thus the heated substrate due to the uncooled process probably lowers the electric resistivity in nickel oxide films.…”

Section: Resultsmentioning

confidence: 95%

NiO Films Formed at Room Temperature for Microbolometer

Jung¹,

Koo²,

Lee³

et al. 2013

Journal of Sensor Science and Technology

View full text Add to dashboard Cite

Nickel oxide films using RF sputter was formed on the SiO 2 /Si substrate at the room temperature controlled with water circulation system. The feasibility of nickel oxide film as a bolometric material was demonstrated. GIXRD spectrum on NiO(111), NiO(200), and NiO(220) orientation expected as the main peaks were appeared in the grown nickel oxide films. The typical resistivity acquired at the RF power of 100W was about 34.25 Ω cm. And it was reduced to 18.65 Ω cm according to the increase of the RF power to 400W. The TCR of fabricated micro-bolometer with the resistivity of 34.25 Ω cm was -2.01 %/ o C. The characteristics of fabricated nickel oxide film and micro-bolometer were analyzed with XRD pattern, resistivity, TCR, and SEM images. Received : Aug. 1, 2013, Revised : Sep. 24, Accepted : Sep. 25, 2013 This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License(http://creativecommons.org/licenses/bync/3.0)which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. Keywords

show abstract

“…A variety of growth techniques to form nickel oxide films has been developed for based on sol-gel deposition, spray pyrolysis, electron beam evaporation, plasma-enhanced chemical vapor deposition, reactive sputtering, molecular beam epitaxy, etc. [7]. Because reactive sputtering has the potential advantages of a high deposition rate, a low temperature process, a high degree of uniformity in a large substrate area, and excellent controllability of compositions in deposited films, it has been widely adapted for nickel oxide growth technology [8].…”

Section: Introductionmentioning

confidence: 99%

“…The sputtered nickel oxide films are prominently studied in physical properties dependent on the changing of reaction gas, partial pressure, and substrate temperature [6][7][8][9][10]. Many previous studies have mentioned good consequences in electric conductivity and optical properties of NiO films.…”

Section: Introductionmentioning

confidence: 99%

“…Many previous studies have mentioned good consequences in electric conductivity and optical properties of NiO films. They were grown in a pure oxygen atmosphere on a heated substrate (200-600 o C) with a reactive sputtering system at a sputtering pressure of 0.1 to 1Pa [6][7][8][9][10]. A few of experimental studies considering room temperature deposition of nickel oxide were recently published [6,14,15].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Resistivity Variation of Nickel Oxide by Substrate Heating in RF Sputter for Microbolometer

Lee¹

2015

Journal of Sensor Science and Technology

View full text Add to dashboard Cite

Thin nickel oxide films formed on uncooled and cooled SiO 2 /Si substrates using a radio frequency (RF) magnetron sputter powered by 200 W in a mixed atmosphere of argon and oxygen. Grazing-incidence X-ray diffraction and field emission scanning electron microscopy are used for the structural analysis of nickel oxide films. The electrical conductivity required for better bolometric performance is estimated by means of a four-point probe system. Columnar and (200) preferred orientations are discovered in both films regardless of substrate cooling. Electric resistivity, however, is greatly influenced by the substrate cooling. Oxygen partial pressure increase during the nickel oxide deposition leads to a rapid decrease in resistivity, and the resistivity is higher in the cooled nickel oxide samples. Even when small microstructure variations are applied, lower resistivity in favor of low noise performance is acquired in the uncooled samples.

show abstract

Characterization of sputtered NiO thin films

Cited by 254 publications

References 13 publications

Effect of Carrier Transport in NiO on the Photovoltaic Properties of Lead Iodide Perovskite Solar Cells

Effect of Carrier Transport in NiO on the Photovoltaic Properties of Lead Iodide Perovskite Solar Cells

NiO Films Formed at Room Temperature for Microbolometer

Resistivity Variation of Nickel Oxide by Substrate Heating in RF Sputter for Microbolometer

Contact Info

Product

Resources

About