Characterization of solar grade silicon by Neutron Activation Analysis

Revel, Gilles de; Deschamps, N.; Dardenne, C.; Pastol, J.-L.; Hania, B.; Dinh, Hung-Cuong

doi:10.1007/bf02164380

Cited by 17 publications

(6 citation statements)

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“…In the HFR reactor at Petten, Netherlands, a special irradiation facility was constructed for irradiation of silicon samples of Philips, in which silicon wafers Ref. [28] and Ref. [29] Ref.…”

Section: A Test Case -Inaa Of Trace Elemerits In Siliconmentioning

confidence: 99%

“…[ [26] or 0.6 ppb [25]. Revel et al [28] found this contribution of 28Si (n,pa) 24Na to be less than 0.4 ppb. Haas et al [32] warned against the common use of wrapping the sample for irradiation in A1 foil, as they showed that there is a recoil of 24Na from the A1 wrapping to the sample, due to the high recoil energy from the 27Al (n, a) 24Na reaction, In many other uses it is not important, but due to the very low concentrations of Na in pure Si, this contribution might be a considerable one.…”

Section: A Test Case -Inaa Of Trace Elemerits In Siliconmentioning

confidence: 99%

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Instrumental neutron activation analysis (INAA)

Alfassi

1994

Determination of Trace Elements

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Section: A Test Case -Inaa Of Trace Elemerits In Siliconmentioning

confidence: 99%

Section: A Test Case -Inaa Of Trace Elemerits In Siliconmentioning

confidence: 99%

Instrumental neutron activation analysis (INAA)

Alfassi

1994

Determination of Trace Elements

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“…Nous avons développé cette méthode au C.E.C.M. de Vitry dans le cadre de trois contrats COMES et AFME [5][6][7]. L'installation que nous avons conçue et réalisée pour mettre en oeuvre ce procédé a déjà été décrite [8].…”

Section: Classificationunclassified

Etude de la solidification directionnelle en creuset du silicium en vue d'un usage solaire

Revel¹,

Pastol

Hania

et al. 1987

Rev. Phys. Appl. (Paris)

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2014 La méthode de croissance développée permet de préparer des lingots de silicium mono et polycristallins. La solidification est réalisée de bas en haut à partir d'un échangeur de chaleur. Divers matériaux ont été testés pour la réalisation du creuset. Des échantillons de qualités électronique (Si-EG) et métallurgique améliorée (Si-UMG) sont traités. Cette méthode permet également de préparer des lingots de Si-EG enrichis volontairement en une impureté sélectionnée. Les lingots obtenus sont caractérisés par macro et micrographie, analyses par activation et mesures de propriétés électriques. L'influence des conditions d'échange thermique sur la forme de l'interface et ses conséquences sur la structure des lingots est abordée. Le comportement des impuretés au cours de la solidification est étudié. La possibilité de réaliser des cellules solaires à partir de Si-UMG est discutée. Abstract. 2014 The growth method developed allows to prepare single and polycrystalline silicon ingots. Solidification takes place from the bottom to the top from a heat exchanger. Some crucible materials have been tested. Electronic grade (EG-Si) and upgraded metallurgical grade (UMG-Si) silicon samples are treated. This method allows too to prepare EG-Si ingots deliberately enriched with a selected impurity. The obtained ingots are studied by macro and micrography, activation analyses and electrical properties measurements. The influence of thermal exchange conditions on the interface shape and the consequences on the structure of the ingots is considered. The behaviour of the impurities during the solidification is studied. The possibility to make solar cells from UMG-Si ingots is discussed.

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“…The resulting Si still contains large quantities of B and P. It is p-type, with a resistivity near 0.04 Hem and an electron diffusion length equal to [13][14][15][16][17][18] [6] : these values are consistent with a boron content of 20 ppma.…”

Section: Introductionmentioning

confidence: 97%

“…Ingots were grown by a directional freezing technique, as explained in the original papers [14], one of which appears in this issue of Revue Phys. Appl.…”

Section: Introductionmentioning

confidence: 99%