Characterization of SnO 2 thin films through thermoelectric power measurements

Gordillo, G.; Paez, B. A.; Jácome, C.E; Flórez, José Manuel ÁLvarez

doi:10.1016/s0040-6090(98)01485-0

Cited by 16 publications

(3 citation statements)

References 13 publications

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“…Additionally, transmittance values were 86%, which were determined in the [350 nm, 1000 nm] region corresponding to the far UV and near IR regions. The values of the thermoelectric power correspond to degenerated semiconductors [8] and the theoretical expression after solving the Boltzmann equation is given by [8] …”

Section: Methodsmentioning

confidence: 99%

Production and characterization of indium oxide and indium nitride

B.¹,

P.²,

S.³

et al. 2006

Braz. J. Phys.

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Thin films of indium oxide 200 nm thick and indium nitride 150 nm thick were produced by reactive sputtering deposition onto soda lime substrates. The Indium cathode was kept under vacuum attached to a high voltage dc. The In x O y films were obtained in argon-oxygen mixture with total pressure between 2 and 7 Pa, current density between 0.04 and 0.56 mA/cm 2 and substrate temperature of 300 K. The In x N y films were obtained in argon-nitrogen mixture with total pressure between 1 and 5 Pa, current density between 0.18 and 14 mA/cm 2 and substrate temperature of 320 K. Results revealed that thin films give rise to high conductivity, are transparent and have a carrier density of 10 19 cm −3 for In x O y and 10 17 cm −3 for In x N y . These results were obtained mainly from temperature dependent α and σ measurements. The reduced chemical potential was calculated considering three different scattering mechanisms i.e. interaction with optically polarized phonons, interaction with ionized impurities and interaction with grains, in order to identify the main scattering mechanism, which resulted to be due to impurities.

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Section: Methodsmentioning

confidence: 99%

Production and characterization of indium oxide and indium nitride

B.¹,

P.²,

S.³

et al. 2006

Braz. J. Phys.

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“…This value is relatively lower than the one reported by Ferreira et al [7] for the SnO 2 thin film, who found that the Seebeck coefficient was −255 µV/K with a low power factor (~10 −4 W/m•K 2 ) at room temperature. On the other hand, G. Gordillo et al [8] studied F-doped SnO 2 thin films by spray pyrolysis at 400 • C. While incorporating HF into the host precursor (Sn) solution, they noticed a reduced electrical resistivity at 3 × 10 −4 Ω•cm. However, under the same conditions, the Seebeck coefficient (thermoelectric power) also exhibited a low value, measuring less than −100 µV/K.…”

Section: Introductionmentioning

confidence: 99%

“…Recent reports of the preparation of SnO 2 and FTO thin films used different physical and chemical methods [7][8][9][10][11][12][13][14][15]. All of these methods have advantages and disadvantages.…”

Section: Introductionmentioning

confidence: 99%

Nanostructured Oxide (SnO2, FTO) Thin Films for Energy Harvesting: A Significant Increase in Thermoelectric Power at Low Temperature

Deva Arun Kumar,

Valanarasu,

Capelle

et al. 2024

Micromachines

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Previous studies have shown that undoped and doped SnO2 thin films have better optical and electrical properties. This study aims to investigate the thermoelectric properties of two distinct semiconducting oxide thin films, namely SnO2 and F-doped SnO2 (FTO), by the nebulizer spray pyrolysis technique. An X-ray diffraction study reveals that the synthesized films exhibit a tetragonal structure with the (200) preferred orientation. The film structural quality increases from SnO2 to FTO due to the substitution of F− ions into the host lattice. The film thickness increases from 530 nm for SnO2 to 650 nm for FTO films. Room-temperature electrical resistivity decreases from (8.96 ± 0.02) × 10−2 Ω·cm to (4.64 ± 0.01) × 10−3 Ω·cm for the SnO2 and FTO thin films, respectively. This is due to the increase in the carrier density of the films, (2.92 ± 0.02) × 1019 cm−3 (SnO2) and (1.63 ± 0.03) × 1020 cm−3 (FTO), caused by anionic substitution. It is confirmed that varying the temperature (K) enhances the electron transport properties. The obtained Seebeck coefficient (S) increases as the temperature is increased, up to 360 K. The synthesized films exhibit the S value of −234 ± 3 μV/K (SnO2) and −204 ± 3 μV/K (FTO) at 360 K. The estimated power factor (PF) drastically increases from ~70 (μW/m·K2) to ~900 (μW/m·K2) for the SnO2 and FTO film, respectively.

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