Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD

Low-Temperature Fabricated TFTs on Polysilicon Stripes

“…The gas phase contained 0.08% of SiH 4 and 18% of N 2 O-see [25] and [26] for more details. The thickness of the deposited oxides was determined by J.…”

Nanolink-based thermal devices : integration of ALD tin thin films

“…Before deposition, samples were cleaned in 100 % HNO 3 for 10 min followed by immersion in boiling 69 % HNO 3 [63]. A number of TiN samples were passivated with a ('standard') 50 nm SiO 2 layer, deposited from SiH 4 and N 2 O at 300 ºC in a Plasmalab80plus PECVD system by Oxford Instruments (i.e.…”

“…During fabrication of SMAs, the ALD TiN thin film in the SMA is likely to be exposed to low-temperature oxidizing ambients; for instance primers, (pre-)bakes, cleaning and dielectric deposition such as the fabrication of an SiO 2 layer by chemical vapour deposition (CVD) from SiH 4 and N 2 O [63]. Therefore, oxidation of ALD TiN at atmospheric conditions (dry (O 2 ) and wet (H 2 O)), as well as in an inductively coupled Ar/N 2 O plasma is investigated.…”

Electronic devices fabricated at CMOS backend-compatible temperatures

“…The gas phase contained 0.08% of SiH 4 and 18% of N 2 O -see [43] and [44] for more details. The thickness of the deposited oxides was determined "in-situ" by spectroscopic ellipsometer (see section 2.4).…”

“…A 100-nm thick SiO 2 gate dielectric layer was deposited by means of remote inductively coupled plasma enhanced chemical vapour deposition (ICPECVD) in Ar-N 2 O-SiH 4 plasma at 150 °C and pressure 1 Pa. The gas phase contained 0.08% of SiH 4 and 18% of N 2 O -see [43] and [44] for more details. The thickness of the deposited oxides was determined by a Woollam M2000U spectroscopic ellipsometer (SE) and was confirmed by C-V measurements.…”