Characterization of single-crystalline Al films grown on Si(111)

Fortuin, A.W.; Alkemade, P.F.A.; Verbruggen, A. H.; Steinfort, A.J.; Zandbergen, H.W.; Radelaar, S.

doi:10.1016/0039-6028(96)00824-2

Cited by 15 publications

(6 citation statements)

References 25 publications

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“…Al films can be epitaxially grown on 7 × 7 reconstructed Si(111) [ 9 ]. In this work, Si(111) wafers with resistivity of 8 to 12 Ωm were used as a substrate.…”

Section: Methodsmentioning

confidence: 99%

Size evolution of ion beam synthesized Pb nanoparticles in Al

Wang

Zhu

2014

Nanoscale Res Lett

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The size evolution of Pb nanoparticles (NPs) synthesized by ion implantation in an epitaxial Al film has been experimentally investigated. The average radius R of Pb NPs was determined as a function of implantation fluence f. The R(f) data were analyzed using various growth models. Our observations suggest that the size evolution of Pb NPs is controlled by the diffusion-limited growth kinetics (R2∝f). With increasing implantation current density, the diffusion coefficient of Pb atoms in Al is evident to be enhanced. By a comparative analysis of the R(f) data, values of the diffusion coefficient of Pb in Al were obtained.

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“…Al films can be epitaxially grown on 7 × 7 reconstructed Si(111) [ 9 ]. In this work, Si(111) wafers with resistivity of 8 to 12 Ωm were used as a substrate.…”

Section: Methodsmentioning

confidence: 99%

Size evolution of ion beam synthesized Pb nanoparticles in Al

Wang

Zhu

2014

Nanoscale Res Lett

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“…Al films were grown epitaxially on 7 × 7 reconstructed Si(111) [20]. In our work, Si(111) wafers with resistivity 8-12 m were used as a substrate.…”

Section: Methodsmentioning

confidence: 99%

The superconducting proximity effect in epitaxial Al/Pb nanocomposites

Wang

Picot

Houben

et al. 2013

Supercond. Sci. Technol.

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We have investigated the superconducting properties of Pb nanoparticles with a diameter ranging from 8 to 20 nm, synthesized by Pb + ion implantation in a crystalline Al matrix. A detailed structural characterization of the nanocomposites reveals the highly epitaxial relation between the Al crystalline matrix and the Pb nanoparticles. The Al/Pb nanocomposites display a single superconducting transition, with the critical temperature T c increasing with the Pb content. The dependence of T c on the Pb/Al volume ratio was compared with theoretical models of the superconducting proximity effect based on the bulk properties of Al and Pb. A very good correspondence with the strong-coupling proximity effect model was found, with an electron-phonon coupling constant in the Pb nanoparticles slightly reduced compared to bulk Pb. Our result differs from other studies on Pb nanoparticle based proximity systems where weak-coupling models were found to better describe the T c dependence. We infer that the high interface quality resulting from the ion implantation synthesis method is a determining factor for the superconducting properties. Critical field and critical current measurements support the high quality of the nanocomposite superconducting films.

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“…There are two symmetrically equivalent orientations, and this leads to twin defects that prevent the fabrication of atomically smooth films. Molecular beam epitaxy of Al on Si (111) in [ 5 ], GaAs(001) in [ 6 ], and Al 2 O 3 in [ 7 ] is usually fabricated at a substrate temperature of about 750 °C with an RMS surface roughness down to 1 nm. In fact, peak-to-peak roughness is very important for the fabrication of tunnel heterostructures, which determines the density of the main defects and their strength.…”

Section: Fabricationmentioning

confidence: 99%

Quasiepitaxial Aluminum Film Nanostructure Optimization for Superconducting Quantum Electronic Devices

et al. 2023

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In this paper, we develop fabrication technology and study aluminum films intended for superconducting quantum nanoelectronics using AFM, SEM, XRD, HRXRR. Two-temperature-step quasiepitaxial growth of Al on (111) Si substrate provides a preferentially (111)-oriented Al polycrystalline film and reduces outgrowth bumps, peak-to-peak roughness from 70 to 10 nm, and texture coefficient from 3.5 to 1.7, while increasing hardness from 5.4 to 16 GPa. Future progress in superconducting current density, stray capacitance, relaxation time, and noise requires a reduction in structural defect density and surface imperfections, which can be achieved by improving film quality using such quasiepitaxial growth techniques.

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Characterization of single-crystalline Al films grown on Si(111)

Cited by 15 publications

References 25 publications

Size evolution of ion beam synthesized Pb nanoparticles in Al

Size evolution of ion beam synthesized Pb nanoparticles in Al

The superconducting proximity effect in epitaxial Al/Pb nanocomposites

Quasiepitaxial Aluminum Film Nanostructure Optimization for Superconducting Quantum Electronic Devices

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