Characterization of Silicon Photovoltaic Wafers Using Infrared Photoelasticity

Lin, Tung-Wei; Horn, Gavin P.; Johnson, Harley T.

doi:10.1007/978-3-319-00876-9_37

Cited by 1 publication

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“…Some preliminary results reported here were first published in the Proceedings of the Society of Experimental Mechanics (2013) [15]. The authors acknowledge SolarWorld Industries, America (Hillsboro, OR) for the PV wafer preparation and the PL measure ments, and thank Dr. Bjoem Seipel, in particular, for technical as sistance.…”

Section: Acknowledgmentmentioning

confidence: 92%

“…The infrared gray field polariscope (IR-GFP) is capable of measuring low optical re tardation associated with thin wafers due to its subfringe resolu tion and allows full-field stress mapping for each silicon wafer in less than 30 s [12]. IR-GFP imaging for residual stress characteri zation is presented in both microelectronic-grade and PV-grade silicon wafers by estimating an analytical wafer stress field [13][14][15], as an alternative to experimentally calibrating the wafer stress state, for example, by cleaving the wafer and measuring the amount of relieved stress [16]. Finite element analysis (FEA) results can be obtained for the stress associated with precipitates in the silicon wafers and compared to the infrared photoelastic measurements.…”

Section: Introductionmentioning

confidence: 99%

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Quantitative Infrared Photoelasticity of Silicon Photovoltaic Wafers Using a Discrete Dislocation Model

Lin

Horn

Johnson

2015

Journal of Applied Mechanics

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Residual stress and crystalline defects in silicon wafers can affect solar cell reliability and performance. Infrared photoelastic measurements are performed for stress mapping in monocrystalline silicon photovoltaic (PV) wafers and compared to photoluminescence (PL) measurements. The wafer stresses are then quantified using a discrete dislocationbased numerical modeling approach, which leads to simulated photoelastic images. The model accounts for wafer stress relaxation due to dislocation structures. The wafer strain energy is then analyzed with respect to the orientation of the dislocation structures. The simulation shows that particular locations on the wafer have only limited slip systems that reduce the wafer strain energy. Experimentally observed dislocation structures are consistent with these observations from the analysis, forming the basis for a more quanti tative infrared photoelasticity-based inspection method.

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Section: Acknowledgmentmentioning

confidence: 92%