2003
DOI: 10.1016/s0167-577x(03)00284-2
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Characterization of silicon oxynitride thin films deposited by electron beam physical vapor deposition technique

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Cited by 36 publications
(29 citation statements)
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“…The main binding energy of Si2p obtained from Si-N-O film deposited at 5 sccm was 99.8 eV, and it shifted to 102.1 eV when N 2 flow changed to 20 sccm, a shift of 2.3 eV. Three symmetry peaks with binding energies of 99.7 eV, 101.4 eV and 102.7 eV (corresponding to Si, Si 3 N 4 and SiO x (x≤2) [14][15][16], respectively) could be found from the Si2p spectra obtained from Si-N-O film deposited at 5 sccm, but only two symmetry peaks with binding energies of 101.8 eV and 102.9 eV (corresponding to Si 3 N 4 and SiO x (x≤2) [17,18], respectively) could be found when N 2 flow changed from 5 sccm to 20 sccm.…”
Section: Xps Analysissmentioning
confidence: 96%
“…The main binding energy of Si2p obtained from Si-N-O film deposited at 5 sccm was 99.8 eV, and it shifted to 102.1 eV when N 2 flow changed to 20 sccm, a shift of 2.3 eV. Three symmetry peaks with binding energies of 99.7 eV, 101.4 eV and 102.7 eV (corresponding to Si, Si 3 N 4 and SiO x (x≤2) [14][15][16], respectively) could be found from the Si2p spectra obtained from Si-N-O film deposited at 5 sccm, but only two symmetry peaks with binding energies of 101.8 eV and 102.9 eV (corresponding to Si 3 N 4 and SiO x (x≤2) [17,18], respectively) could be found when N 2 flow changed from 5 sccm to 20 sccm.…”
Section: Xps Analysissmentioning
confidence: 96%
“…Vanadium oxide coatings prepared by dip coating enhance light transmittance after lyophilization [86] . TiO 2 nanotexture [87] coatings used as cover cells prepared by dip coating (6mm/sec) gives optical transmittance with self-cleaning ability applicable in PV cells. The major disadvantage of this technique includes the slow fabrication process, in comparison with other methods.…”
Section: E-issn: 2321-6212 P-issn: 2347-2278mentioning
confidence: 99%
“…The presence of oxygen contamination my arise from the oxidation of some Si powder by air exposure, the residual water in the coating unit's jar and the adsorbed oxygen or the hydroxyl molecules on the surface of the film after it got out of the evaporation chamber or rf plasma reactor tube. Nitrogen can be incorporated into Si using nitridation by energetic rf nitrogen plasmas [7,18]. This nitridation method can be performed at low temperatures ≈ 25-500…”
Section: Structural Properties 311 Film Composition and Thicknessmentioning
confidence: 99%
“…• C [7]. As the surface of the Si film is subjected to nitrogen plasma, the nitrogen ions are incorporated into the surface region.…”
Section: Structural Properties 311 Film Composition and Thicknessmentioning
confidence: 99%
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