Characterization of silicon oxynitride films by grazing-emission X-ray fluorescence spectrometry

Monaghan, M.L.; Nigam, T.; Houssa, Michel; Gendt, Stefan De; Urbach, H. P.; Bokx, P.K. de

doi:10.1016/s0040-6090(99)00739-7

Cited by 16 publications

(14 citation statements)

References 13 publications

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“…[9] Different applications based on this technique have been realized since in cultural heritage, [10] detection of trace elements [11] and contaminants on Si surfaces, [12] thin-layer analysis, [13] and analysis of surfaces. [14] GEXRF permits a multi-elemental analysis and a specification of the deposition type, respectively contamination, in terms of quantity and structure (bulk, layers and films, residual particles).…”

Section: Gexrf Methodologymentioning

confidence: 99%

Depth profiling of dopants implanted in Si using the synchrotron radiation based high‐resolution grazing emission technique

et al. 2012

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We report on the surface-sensitive grazing emission X-ray fluorescence technique combined with synchrotron radiation excitation and high-resolution detection to realize depth-profile measurements of Al-implanted Si wafers. The principles of grazing emission measurements as well as the benefits offered by synchrotron sources and wavelength-dispersive detection setups are presented. It is shown that the depth distribution of implanted ions can be extracted from the dependence of the X-ray fluorescence intensity on the grazing emission angle with nanometer-scale precision provided that an analytical function describing the shape of the depth distribution is assumed beforehand. If no a priori assumption is made, except a bell shaped form for the dopant distribution, the profile derived from the measured angular distribution is found to reproduce quite satisfactorily the depth distribution of the implanted ions.

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Section: Gexrf Methodologymentioning

confidence: 99%

Depth profiling of dopants implanted in Si using the synchrotron radiation based high‐resolution grazing emission technique

et al. 2012

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“…Nevertheless, the probed depth region is still on the submicrometer scale since the shallow observation angles result in long emission paths within the sample and consequently in a quite pronounced absorption. As mentioned, GEXRF was also used, like GIXRF, for thin-film and layer analysis of metallic elements or alloys [70][71][72][73][74] in order to study surface oxidation, growth processes, the influence of neighboring low-Z layers or simply the density and thickness of the deposited films. The GEXRF method shows, thus, a good potential for layer characterization and for process control, since besides the elemental information also structural information on the thin films can be obtained.…”

Section: Gixrf and Gexrfmentioning

confidence: 99%

High-energy-resolution grazing emission X-ray fluorescence applied to the characterization of thin Al films on Si

Kayser

Szlachetko

Banaś

et al. 2013

Spectrochimica Acta Part B: Atomic Spectroscopy

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The grazing emission X-ray fluorescence (GEXRF) technique was applied to the analysis of different Al films, with nominal thicknesses in the range of 1 nm to 150 nm, on Si wafers. In GEXRF the sample volume from which the fluorescence intensity is detected is restricted to a near-surface region whose thickness can be tuned by varying the observation angle. This is possible because of the refraction of the fluorescence X-rays and the quite long emission paths within the probed sample. By recording the X-ray fluorescence signal for different shallow emission angles, defined relatively to the flat, smooth sample surface, the deposited Al surface layers of the different samples could be well characterized in terms of layer thickness, layer density, oxidation and surface roughness. The advantages offered by synchrotron radiation and the employed wavelength-dispersive detection setup were profited from. The GEXRF results retrieved were confirmed by complementary measurements. The experimental setup, the principles and advantages of GEXRF and the analysis of the recorded angular intensity profiles will be discussed in details.

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“…Indeed, the experimental differences between the two geometries are given by the different critical angles and matrix absorption coefficients for the X-ray wavelengths of interest (incident X-rays or fluorescence X-rays). GEXRF is used for similar applications, i.e., the analysis of thin layers 16,17 or particles deposited on a surface. 18 The oscillations observed in the angular intensity behavior in GEXRF are due to interferences between the fluorescence X-rays following different detection paths while in GIXRF, the oscillations originate from the intensity changes of the XSW field distribution.…”

Section: Gixrf and Gexrfmentioning

confidence: 99%

Characterization of ultra-shallow aluminum implants in silicon by grazing incidence and grazing emission X-ray fluorescence spectroscopy

Hönicke

Kayser

Beckhoff

et al. 2012

J. Anal. At. Spectrom.

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In this work two synchrotron radiation-based depth-sensitive X-ray fluorescence techniques, grazing incidence X-ray fluorescence (GIXRF) and grazing emission X-ray fluorescence (GEXRF), are compared and their potential for non-destructive depth-profiling applications is investigated. The depth-profiling capabilities of the two methods are illustrated for five aluminum-implanted silicon wafers all having the same implantation dose of 10 16 atoms per cm 2 but with different implantation energies ranging from 1 keV up to 50 keV. The work was motivated by the ongoing downscaling effort of the microelectronics industry and the resulting need for more sensitive methods for the impurity and dopant depth-profile control. The principles of GIXRF and GEXRF, both based on the refraction of X-rays at the sample surface to enhance the surface-to-bulk ratio of the detected fluorescence signal, are explained. The complementary experimental setups employed at the Physikalisch-Technische Bundesanstalt (PTB) for GIXRF and the University of Fribourg for GEXRF are presented in detail. In particular, for each technique it is shown how the dopant depth profile can be derived from the angular intensity dependence of the Al Ka fluorescence line. The results are compared to theoretical predictions and, for two samples, crosschecked with values obtained from secondary ion mass spectroscopy (SIMS) measurements. A good agreement between the different approaches is found proving that the GIXRF and GEXRF methods can be efficiently employed to extract the dopant depth distribution of ionimplanted samples with good accuracy and over a wide range of implantation energies.

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Characterization of silicon oxynitride films by grazing-emission X-ray fluorescence spectrometry

Cited by 16 publications

References 13 publications

Depth profiling of dopants implanted in Si using the synchrotron radiation based high‐resolution grazing emission technique

Depth profiling of dopants implanted in Si using the synchrotron radiation based high‐resolution grazing emission technique

High-energy-resolution grazing emission X-ray fluorescence applied to the characterization of thin Al films on Si

Characterization of ultra-shallow aluminum implants in silicon by grazing incidence and grazing emission X-ray fluorescence spectroscopy

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