Characterization of SiGe/Si Quantum Dot Grown by using APRPCVD

Abstract

We have investigated the characterization of SiGe/Si quantum dot (QD) grown directly onto Si (001) substrates using atmospheric pressure reduced pressure chemical vapor deposition (APRPCVD) system in an ASM Epsilon One. The structural properties of the SiGe/Si QD were investigated using X-ray diffraction (XRD), SEM and TEM. The optical properties of the SiGe/Si QD were investigated using Raman spectroscopy and photocurrent (PC) measurement. The transition peaks related to the QD region observed in the PC spectrum were preliminarily assigned to electron-heavy hole (e-hh) and electron-light hole (elh) transitions.