Characterization of Si/GexSi1−x structures by micro-Raman imaging

Nakashima, S.; Yamamoto, Takenori; Ogura, Atsushi; Uejima, K.

doi:10.1063/1.1695443

Cited by 51 publications

(39 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Raman analysis has been shown (6) to be a very useful tool in the characterisation of materials, including nanomaterials (7) . It is a relatively fast and completely non-destructive technique that depends on the inelastic scattering of light in order to extract information from the material under investigation.…”

Section: Preparationmentioning

confidence: 99%

Micro-Raman analysis of quantum confined crystalline germanium nanowire arrays

McCarthy¹,

Audoit²,

Perova³

et al. 2006

insight

View full text Add to dashboard Cite

Section: Preparationmentioning

confidence: 99%

Micro-Raman analysis of quantum confined crystalline germanium nanowire arrays

McCarthy¹,

Audoit²,

Perova³

et al. 2006

insight

View full text Add to dashboard Cite

“…They run from basic inspection of as-grown semiconductors to advanced device inspection tools. For instance, Raman mapping enables to check the crystalline quality [6,7], the composition [8,9], the doping level [10-13], or the uniformity of as-grown semiconductor materials. Along this line one on the most popular applications in microelectronics is strain measurements, either at the device or at the full wafer scale [9,14-17].…”

Section: Introductionmentioning

confidence: 99%

Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC

et al. 2011

View full text Add to dashboard Cite

Micro-Raman and micro-transmission imaging experiments have been done on epitaxial graphene grown on the C- and Si-faces of on-axis 6H-SiC substrates. On the C-face it is shown that the SiC sublimation process results in the growth of long and isolated graphene ribbons (up to 600 μm) that are strain-relaxed and lightly p-type doped. In this case, combining the results of micro-Raman spectroscopy with micro-transmission measurements, we were able to ascertain that uniform monolayer ribbons were grown and found also Bernal stacked and misoriented bilayer ribbons. On the Si-face, the situation is completely different. A full graphene coverage of the SiC surface is achieved but anisotropic growth still occurs, because of the step-bunched SiC surface reconstruction. While in the middle of reconstructed terraces thin graphene stacks (up to 5 layers) are grown, thicker graphene stripes appear at step edges. In both the cases, the strong interaction between the graphene layers and the underlying SiC substrate induces a high compressive thermal strain and n-type doping.

show abstract

“…That is why a technique to characterize strain with sub-100 nm resolution reliably is high in demand. Micro-Raman spectroscopy has been a popular for strain measurements because it is non-destructive and straightforward [19][20][21] . Compressive strain will shift the Raman peak to higher frequency, while the tensile strain will shift it to lower frequency.…”

Section: Resultsmentioning

confidence: 99%

Near-field spectroscopy of nanostructures

Shen

et al. 2010

SPIE Proceedings

View full text Add to dashboard Cite

We report a new near-field Raman imaging technique by trapping and scanning a dielectric microsphere over a sample surface in water. This method has a few critical advantages over both aperture and apertureless near-field Raman techniques, such as strong near-field signal, high reproducibility, high resolution and cheap cost. In this method, the laser is focused to a spot smaller than diffraction limit and only the near-field signal is collected. Using this method, we have achieved spatial resolution of 80 nm. This spatial resolution is extremely useful and powerful for a wide range of applications such as the characterization of nanostructures and nano devices. We show the capability of our technique using a series of nanometer sized samples, e.g. device sample with 45 nm poly-Si gates with SiGe stressors, Au nanopatterns and Au nanobowl structures. Besides of the achievement of high resolution, our near-field technique also provides the opportunity to explore the near-field optical response of surface plasmons of metal nanostructures that cannot be attained by far-field spectroscopy.

show abstract

Characterization of Si/GexSi1−x structures by micro-Raman imaging

Cited by 51 publications

References 26 publications

Micro-Raman analysis of quantum confined crystalline germanium nanowire arrays

Micro-Raman analysis of quantum confined crystalline germanium nanowire arrays

Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC

Near-field spectroscopy of nanostructures

Contact Info

Product

Resources

About