Characterization of Si–Ge alloy nanocrystals produced in a non-thermal plasma reactor

Yasar-Inceoglu, Ozgul; Mangolini, Lorenzo

doi:10.1016/j.matlet.2013.03.080

Cited by 24 publications

(27 citation statements)

References 10 publications

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“…Nominal composition is Ge 0.5 Si 0.5 . Samples investigated in more detail in the following are marked with consecutive numbers (1)(2)(3)(4)(5)(6)(7)(8). Zones of differing morphology are discriminated by their symbols.…”

Section: Introductionmentioning

confidence: 99%

Germanium-silicon alloy and core–shell nanocrystals by gas phase synthesis

et al. 2015

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Section: Introductionmentioning

confidence: 99%

Germanium-silicon alloy and core–shell nanocrystals by gas phase synthesis

et al. 2015

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“…The possibility of mixing Si and Ge in NC alloys has been recently explored, in the attempt of obtaining a response lying between those of pure Si and pure Ge. First investigations seem to confirm this idea, showing an approximately linear variation of optical, electronic, and phonon characteristics of Si x Ge 1− x NCs as a function of the mixing parameter x . To study matrix‐encapsulated Si/Ge NCs, we started from the case of small pure Si‐ and Ge‐NCs embedded in a BC SiO 2 matrix .…”

Section: Embedded Si Ge and Si/ge Ncsmentioning

confidence: 99%

First Principles Modeling of Si/Ge Nanostructures for Photovoltaic and Optoelectronic Applications

Marri

Amato

Guerra

et al. 2018

Physica Status Solidi (b)

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We discuss results of ab initio calculations for Si, Ge, and Si/Ge nanowires and nanocrystals showing that theory can improve the comprehension of the properties of these systems. First, we consider doped and undoped freestanding hydrogenated nanowires and we explore their properties as a function of the size, geometry, and composition. Secondly, we focus the discussion on the electronic properties of matrix embedded Si, Ge, and Si/Ge nanocrystals by pointing out the role played by composition, quantum confinement, and strain. The discussed results show that, for Si/Ge nanowires, the interface between Si and Ge region plays an important role determining, in some case, the formation of a type II band offset, which is essential for photovoltaic applications. Moreover, for Si/Ge core-shell nanowires, it is shown that: i) selective doping results in the formation of hole or electron accumulation, with interesting consequences for the use of these materials in thermoelectrics and ii) through compensated doping, it is possible to tune the optical properties of these systems. For the embedded nanocrystals, the outcomes suggest that Ge nanocrystals can be suitable as optical absorption centers and that Si/Ge nanocrystals, owing to the localization of the band edge states, are interesting for photovoltaic cells.Dr. I. Marri, Prof. S. Ossicini Centro S3 CNR-Istituto Nanoscienze via Campi 213/a,

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“…As discussed earlier, this is likely the consequence of irreversible lithium insertion into the glassy/amorphous carbon matrix. It is also important to stress that the synthesis of silicon particles in low temperature plasma reactors has been demonstrated when using chlorinated precursors such as SiCl 4 , [133][134][135] opening a pathway towards reducing the cost of silicon particles produced via this route.…”

Section: Gas-phase Techniquesmentioning

confidence: 99%