Characterization of Si–C Covalent Bonding Fabricated between Single Carbon Nanotube and Si Substrate

Abstract

The SiC covalent bonding between Carbon nanotube and Si substrate was fabricated by thermal vapor deposition using photolithography and gas blowing technology. Scanning electron microscopy, micro-Raman imaging and spectroscopy were used to investigate the interaction of individual CNTs and Si substrate. The characterization results showed that covalent bonds were formed between certain CNTs and Si substrate. Moreover, the reasons for the fabrication of SiC covalent bonding between CNTs and Si substrate were also proposed.