Characterization of resistivity and work function of sputtered-TaN film for gate electrode applications

Kang, Chang Seok; Cho, H.-J.; Kim, Y. H.; Choi, Rino; Onishi, K.; Shahriar, A.; Lee, J. C.

doi:10.1116/1.1603285

Cited by 93 publications

(59 citation statements)

References 8 publications

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“…It is also reported that the TaN x,xഛ1 films are sensitive to postprocess oxidation and the O content can result from exposure of the films to the ambient. 39,40 The influence of the plasma exposure time on the film composition was also observed by the change in electrical resistivity of the films as determined by in situ SE ͓Eq. ͑2͔͒ and ex situ four-point probe measurements.…”

Section: -7mentioning

confidence: 99%

Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition

Langereis

Knoops

Mackus

et al. 2007

Journal of Applied Physics

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Remote plasma atomic layer deposition (ALD) of TaNx films from Ta[N(CH3)2]5 and H2, H2-N2, and NH3 plasmas is reported. From film analysis by in situ spectroscopic ellipsometry and various ex situ techniques, data on growth rate, atomic composition, mass density, TaNx microstructure, and resistivity are presented for films deposited at substrate temperatures between 150 and 250°C. It is established that cubic TaNx films with a high mass density (12.1gcm−3) and low electrical resistivity (380μΩcm) can be deposited using a H2 plasma with the density and resistivity of the films improving with plasma exposure time. H2-N2 and NH3 plasmas resulted in N-rich Ta3N5 films with a high resistivity. It is demonstrated that the different TaNx phases can be distinguished in situ by spectroscopic ellipsometry on the basis of their dielectric function with the magnitude of the Drude absorption yielding information on the resistivity of the films. In addition, the saturation of the ALD surface reactions can be determined by monitoring the plasma emission, as revealed by optical emission spectroscopy.

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Section: -7mentioning

confidence: 99%

Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition

Langereis

Knoops

Mackus

et al. 2007

Journal of Applied Physics

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“…[4][5][6] Various barrier, liner and capping layers for Cu interconnects have been reported in the effort to stabilize Cu atoms by suppressing their diffusion and migration, including SiN x , SiCN and transition metal nitrides. [7][8][9] However, when it comes to a 22 nm technology node and below, dimensions of interconnects are already less than the mean free path (MFP) of Cu (~40 nm), while Cu metal conductivity decreases exponentially as it shrinks in size below MFP due to surface and grain boundry scattering. [10][11][12] As a result, by adding several nanometers of a low conductivity tantalum nitride barrier layer (~10 6 S/m) onto Cu (5.96 × 10 7 S/m), the effective width of a Cu wire would be decreased by 10 -20 %, thus drastically decreasing the overall conductivity of the nanoscale interconnects.…”

Section: Introductionmentioning

confidence: 99%

“…[17][18] Traditionally, Co metal was deposited by PVD methods that do not have the capability of coating inside high-aspect-ratio structures. 19 Thus, metal-organic chemical vapor deposition (MOCVD) with cobalt carbonyl precursors [e.g., Co 2 (CO) 8 ] was introduced for better conformality. 20 However, cobalt carbonyl precursors have poor thermal stability and narrow useful deposition temperature windows, and usually lead to a rough film with surface roughness rms higher than 2.2 nm.…”

Section: Introductionmentioning

confidence: 99%

Direct-Liquid-Evaporation Chemical Vapor Deposition of Nanocrystalline Cobalt Metal for Nanoscale Copper Interconnect Encapsulation

Feng

Gong

Lou

et al. 2017

ACS Appl. Mater. Interfaces

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In advanced microelectronics, precise design of liner and capping layers becomes critical, especially when it comes to the fabrication of Cu interconnects with dimensions lower than its mean free path. Herein, we demonstrate that direct-liquid-evaporation chemical vapor deposition (DLE-CVD) of Co is a promising method to make liner and capping layers for nanoscale Cu interconnects. DLE-CVD makes pure, smooth, nanocrystalline and highly conformal Co films with highly controllable growth characteristics. This process allows full Co 2 encapsulation of nanoscale Cu interconnects, thus stabilizing Cu against diffusion and electromigration. Electrical measurements and high-resolution elemental imaging studies show that the DLE-CVD Co encapsulation layer can improve the reliability and thermal stability of Cu interconnects. Also, with the high conductivity of Co, the DLE-CVD Co encapsulation layer can potentially further decrease the power consumption of nanoscale Cu interconnects, paving the way for Cu interconnects with higher efficiency in future high-end microelectronics.

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“…These materials have been studied for use in thin-film resistors, wear-resistant coatings on tools, thermal printer heads, gate electrodes, and diffusion barriers in Cu interconnection, which suggest their suitability as diffusion barriers for GaN-based electronics. [38][39][40][41] Selected properties of these materials are given in Table I. In this paper, we report results on Ohmic contacts based on these materials to n-GaN.…”

Section: Introductionmentioning

confidence: 99%

Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts to n-GaN

Voss

Stafford

Khanna

et al. 2007

Journal of Elec Materi

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The use of TaN, TiN, and ZrN diffusion barriers for Ti/Al-based contacts on n-GaN (n $ 3 · 10 17 cm -3 ) is reported. The annealing temperature (600-1,000°C) dependence of the Ohmic contact characteristics using a Ti/Al/X/Ti/Au metallization scheme, where X is TaN, TiN, or ZrN, deposited by sputtering was investigated by contact resistance measurements and Auger electron spectroscopy (AES). The as-deposited contacts were rectifying and transitioned to Ohmic behavior for annealing at ‡600°C. A minimum specific contact resistivity of $6 · 10 -5 X-cm -2 was obtained after annealing over a broad range of temperatures (600-900°C for 60 s), comparable to that achieved using a conventional Ti/Al/Pt/Au scheme on the same samples. The contact morphology became considerably rougher at the high end of the annealing range. The long-term reliability of the contacts at 350°C was examined; each contact structure showed an increase in contact resistance by a factor of three to four over 24 days at 350°C in air. AES profiling showed that the aging had little effect on the contact structure of the nitride stacks.

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Characterization of resistivity and work function of sputtered-TaN film for gate electrode applications

Cited by 93 publications

References 8 publications

Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition

Synthesis and in situ characterization of low-resistivity TaNx films by remote plasma atomic layer deposition

Direct-Liquid-Evaporation Chemical Vapor Deposition of Nanocrystalline Cobalt Metal for Nanoscale Copper Interconnect Encapsulation

Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts to n-GaN

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