Characterization of remote inductively coupled CH4–N2 plasma for carbon nitride thin-film deposition

Abstract

Characterization of the behavior of chemically reactive species in a nonequilibrium inductively coupled argonhydrogen thermal plasma under pulse-modulated operation

Effect of C2H4/N2 Ratio in an Atmospheric Pressure Dielectric Barrier Discharge on the Plasma Deposition of Hydrogenated Amorphous Carbon-Nitride Films (a-C:N:H)

“…Moreover, Seo et al [56] demonstrated that at a high N 2 gas fraction in the gas mixture for the deposition of a-CNx films in CH 4 /N 2 , inductively coupled RF plasma generated more CN radicals, which resulted not only in more N being incorporated into a-CNx films but also to a reduction of H passivation that delayed the formation of hybrid bonding between C and N in the films.…”

Controlling the nanostructure and stability of a-C:H:N plasma polymers

“…It is known that atomic hydrogen preferentially attaches to N during a-C:H:N film growth, thus interrupting the formation of the phase involving C and N bonds by H passivation [30]. Increasing N in the gas phase, however, supports increased formation of CN radicals, which results not only in a higher N incorporation, but also in a reduction of H passivation [31]. A NH 3 /C 2 H 4 gas ratio of around 1 thus induces a high amount of terminating amino (−NH 2 ) groups yielding formation of voids and interconnected nanopores, while a lower gas ratio shows insufficient N incorporation and a higher gas ratio induces more hybrid bonding between C and N in the films as indicated by a higher film density.…”

Quartz Sensor Measurement for N2–H2 Plasmas

“…[1][2][3] In addition, N 2 plasmas have been employed for deposition, chemical nitriding, and etching. [4][5][6][7][8][9][10][11] To improve the properties of products, hydrogen (H 2 )-diluted N 2 plasmas, that is, N 2 -H 2 plasmas are frequently used. For example, the hardness of steel depends on the proportion of H 2 in N 2 -H 2 plasmas, and can be improved by adding H 2 to N 2 .…”