Characterization of predictable quantum efficient detector in terms of optical non-linearity in the visible to near-infrared range

Abstract

Characteristics of predictable quantum efficient detector (PQED) by in terms of optical nonlinearity in the visible to near-infrared range were investigated under zero-bias and reverse-bias voltage conditions. In the zero-bias condition, linear behavior was observed in the wavelength from 405 nm to 1060 nm in the photocurrent range of 1 nA to 10 µA, and saturation occurred for photocurrents over 10 µA for all wavelengths. In the reverse-bias voltage of 10 V, the linear behavior was observed in the photocurrent range of 64 nA to 1 mA except for the wavelength of 1060 nm, and the saturation photocurrent increased up to 1 mA. Supralinearity value at 1060 nm sharply increased from the photocurrent of 100 µA, and its maximum value reached up to 0.34 % at the photocurrent of 1 mA because of the back surface recombination and the longer absorption length. The spectral linearity results of the PQED help us to understand the charge-carrier loss mechanism in the PQED, and would lead to more accurate optical measurement with it.

Linearity and nonlinearity of silicon photodiodes for accurate absolute optical flux measurements: a review

“…However, as shown figures 12(c) and (d), it occasionally occurs the increase of supralinearity value for Si PD C because the starting photocurrent of saturation for Si PD increases by applying the reverse-bias voltage to it. We have confirmed that this phenomenon has occurred in other Si PD as well [28]. The Si PD in which this phenomenon occurs would be difficult to use for accurate optical measurements even after nonlinearity correction.…”

“…In all the previous studies, linearity of the Si PD with respect to the incident optical flux at widely incident wavelengths was fundamental for determining the highly accurate absolute optical flux at a range greater than six orders of magnitude. Various studies have been conducted on linearity and nonlinearity measurements using various type of Si PDs [26][27][28]. In general, an ideal Si PD is linear when the photoelectric response is proportional to the incident optical flux.…”

Recent advances and perspectives in photometry in the era of LED lighting

“…The PQED photodiodes with SiO 2 coating were originally manufactured from low-doping p type silicon [75]. It is also possible to make PQED photodiodes from low-doped n type silicon, but then Al 2 O 3 has been used as the coating material to produce the induced junction [90,91]. The charge-carrier recombination losses of n type photodiodes appear to be somewhat larger than those of p type photodiodes.…”