2010
DOI: 10.1016/j.matchemphys.2010.05.073
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Characterization of porous silicon nitride/silicon oxynitride composite ceramics produced by sol infiltration

Abstract: a b s t r a c tPorous silicon nitride/silicon oxynitride composite ceramics were fabricated by silica sol infiltration of aqueous gelcasting prefabricated Si 3 N 4 green compact. Silica was introduced by infiltration to increase the green density of specimens, so suitable properties with low shrinkage of ceramics were achieved during sintering at low temperature. Si 2 N 2 O was formed through reaction between Si 3 N 4 and silica sol at a temperature above 1550 • C. Si 3 N 4 /Si 2 N 2 O composite ceramics with … Show more

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Cited by 30 publications
(19 citation statements)
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“…Si 2 N 2 O grains exhibited typical elongated lath-like morphology [1]. Generally, the densification process was facilitated by increasing the amount of sintering additive [19,20]. However, in the present research, the density reached its maximum when Li 2 O increased from 5.0 mol% to 7.5 mol%.…”
Section: Microstructure Evolutioncontrasting
confidence: 56%
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“…Si 2 N 2 O grains exhibited typical elongated lath-like morphology [1]. Generally, the densification process was facilitated by increasing the amount of sintering additive [19,20]. However, in the present research, the density reached its maximum when Li 2 O increased from 5.0 mol% to 7.5 mol%.…”
Section: Microstructure Evolutioncontrasting
confidence: 56%
“…Since porous ceramics were reported to have better thermal shock resistance [15,[18][19][20], porous BN/Si 2 N 2 O ceramic composites may exhibit a better resistance than the dense bodies. Therefore, the critical temperature difference (ΔT) of the porous BN/Si 2 N 2 O composites was expected to be increased to 1200°C or higher.…”
Section: Thermal Shock Resistancementioning
confidence: 99%
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“…The relationships between the imaginary part and conductivity of two Si 3 N 4 fibers corresponded reasonably with Equation (6). It is known that the dielectric constant and dielectric loss decrease as the porosity increases [39]. This was caused by the SiN x O y decomposition following annealing at 800 °C.…”
Section: Resultsmentioning
confidence: 99%