Characterization of polarizing semiconductor radiation detectors by laser-induced transient currents

Musiienko, Artem; Grill, R.; Pekárek, Jakub; Belas, E.; Praus, Petr; Pipek, Jindřich; Dědič, V.; Elhadidy, H.

doi:10.1063/1.4997404

Cited by 28 publications

(40 citation statements)

References 19 publications

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“…By considering the collection of free holes in 200 s, the MC simulation in combination with ToF result gives  = 10 −3 cm 2 V −1 in MAPbBr 3 devices. This is competitive with the best mobility-lifetime product found with similar methods in inorganic detectors such as CdZnTe (10 −3 cm 2 V −1 ) (22) and GaAs (6 × 10 −4 cm 2 V −1 ) (35).…”

Section: Analysis Of Drift Mobility Lifetime and Mobility-lifetime mentioning

confidence: 87%

Deciphering the effect of traps on electronic charge transport properties of methylammonium lead tribromide perovskite

et al. 2020

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Halide perovskites have undergone remarkable developments as highly efficient optoelectronic materials for a variety of applications. Several studies indicated the critical role of defects on the performance of perovskite devices. However, the parameters of defects and their interplay with free charge carriers remain unclear. In this study, we explored the dynamics of free holes in methylammonium lead tribromide (MAPbBr3) single crystals using the time-of-flight (ToF) current spectroscopy. By combining ToF spectroscopy and Monte Carlo simulation, three energy states were detected in the bandgap of MAPbBr3. In addition, we found the trapping and detrapping rates of free holes ranging from a few microseconds to hundreds of microseconds. Contrary to previous studies, we revealed a strong detrapping activity of traps. We showed that these traps substantially affect the transport properties of MAPbBr3, including mobility and mobility-lifetime product. Our results provide an insight on charge transport properties of perovskite semiconductors.

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Section: Analysis Of Drift Mobility Lifetime and Mobility-lifetime mentioning

confidence: 87%

Deciphering the effect of traps on electronic charge transport properties of methylammonium lead tribromide perovskite

et al. 2020

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“…The photogenerated free holes are collected on the negative biased cathode. The current transient induced by moving holes is expressed by a single exponent relation [46] ( ) ∝ (− ⁄ ) ,…”

Section: Mixed Ionic and Electronic Conductivity And Transport Propermentioning

confidence: 99%

Deep levels, charge transport and mixed conductivity in organometallic halide perovskites

Musiienko

Moravec

Grill

et al. 2019

Energy Environ. Sci.

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Understanding the type, formation energy and capture cross section of defects is one of the challenges in the field of organometallic halide perovskite (OMHP) devices. Currently, such understanding is limited, restricting the power conversion efficiencies of OMHPs solar cells from reaching their Shockley-Queisser limit. In more matured semiconductors like Si, the knowledge of defects was one of the major factor in successful technological implementation. This knowledge and its control can make a paradigm in development of OMHP devices. Here, we report on deep level (DL) defects and their effect on free charge transport properties of single crystalline methylammonium lead bromide perovskite (MAPbBr3). In order to determine DL activation energy and capture cross section we used photo-Hall effect spectroscopy (PHES) with enhanced illumination in both steady-state and dynamic regimes. This method has shown to be convenient due to the direct DL visualization by sub-bandgap photo-excitation of trapped carriers. DLs with activation energies of EV + 1.05 eV, EV + 1.5 eV, and EV + 1.9 eV (or EC -1.9 eV) were detected. The hole capture cross section of h = 4 × 10 -17 cm 2 is found using photoconductivity relaxation after sub-bandgap photo-excitation. Here, we found the DL defects responsible for non-radiative recombination and its impact on band alignment for the first time. Additionally, the transport properties of single crystal MAPbBr3 is measured by Time of Flight

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“…Note that in CdTe μ n is approximately 10 times larger than μ p (1000 versus 80 cm 2 V −1 s −1 ), therefore the electron pulse moves faster. Such separation behavior can be observed by the transient charge technique in high-resistivity CdTe radiation detectors [36]. However, the compensation ratio should not be too large, otherwise thematerial will be too extrinsic and might enter the intermediate or lifetime regime.…”

Section: Application To Cdte Materialsmentioning

confidence: 89%

Photocarrier transport dynamics in lifetime and relaxation regimes of semiconductors containing traps

Zhang

et al. 2019

Mater. Res. Express

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High resistivity semiconductors used in various optoelectronic devices, such as radiation detectors and photoconductive switches, usually require electrical compensation involving deep level defects, which are also closely related to the photocarrier transport dynamics. In this paper, one-dimensional spatiotemporal evolution of photocarriers is numerically investigated in semiconductors containing traps. After introducing a high concentration of traps, the dynamics can be divided into three categories: relaxation, lifetime and intermediate regimes. Photocarriers will separate in the relaxation regime and transport ambipolarly in the lifetime regime. Captured space charges enhance the internal electric field between photogenerated electrons and holes, thus reduce carriers' transport velocities in all three regimes. Storage of photocarriers in traps also weakens the majority carrier depletion in the relaxation regime, and could pin the majority carriers to the injection spot in the lifetime regime. In the intermediate regime, both semiconductor type and relative magnitudes of the dielectric relaxation time and carrier lifetimes determine the photocarrier transport behavior. By combining the threeenergy-level compensation model and the trap-mediated recombination model, the criterion for different regimes and photocarrier transport dynamics are investigated in deep donor compensated CdTe semiconductors.

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Characterization of polarizing semiconductor radiation detectors by laser-induced transient currents

Cited by 28 publications

References 19 publications

Deciphering the effect of traps on electronic charge transport properties of methylammonium lead tribromide perovskite

Deciphering the effect of traps on electronic charge transport properties of methylammonium lead tribromide perovskite

Deep levels, charge transport and mixed conductivity in organometallic halide perovskites

Photocarrier transport dynamics in lifetime and relaxation regimes of semiconductors containing traps

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