Characterization of plasma-surface contacts in low-pressure rf discharges using ion energy analysis and langmuir probes'

Effect of Substrate Temperature on Thermal Properties and Deposition Kinetics of Atmospheric Plasma Deposited Methyl(methacrylate) Films

“…Numerous in situ plasma diagnostic tools were developed to deduce physical and chemical information from molecular plasmas . More specific, the Langmuir probe has been used for the identification of electron density and electron temperature in medium dense plasmas (10 10 –10 12 cm −3 ) . The relationship between the external plasma parameters and properties of the plasma deposited films depends on the plasma reactor type, which is not the case for internal plasma parameters.…”

A capacitive probe with shaped probe bias for ion flux measurements in depositing plasmas

“…In order to overcome this problem, several authors have proposed an in situ cleaning procedure by biasing the probe to high voltages 8,9 ͑up to 100 V͒ or by including film growth in the probe analysis. 10 An alternative method to measure the ion flux has been recently proposed by Braithwaite et al 11 By using a short periodically chopped rf pulse ͑ϳ100 s͒ to bias a planar probe, the current and voltage are monitored during the discharging of an external capacitor connected in series with a large single side disk guarded by a ring. This approach is particularly suitable to measure ion fluxes in processing plasmas as long as the thickness of the deposited layer on the probe surface is below a certain critical value.…”

Probe Measurements on Parametric Decay and Density Threshold in a Linear Microwave Discharge

“…In this case, the "effective" or "screening" temperature kT scr ([11], [12]) derived from the kinetic Bohm criterion [13] has to be used. Finally, the electron density is calculated by n e = f(v)dv.…”