Characterization of planar and 3D Silicon pixel sensors for the high luminosity phase of the CMS experiment at LHC

Abstract

The High Luminosity upgrade of the CERN LHC collider (HL-LHC) demands for a new, highradiation tolerant solid-state pixel sensor capable of surviving fluencies up to a few 10 16 n eq /cm 2 at ∼ 3 cm from the interaction point. To this extent the INFN ATLAS-CMS joint research activity, in collaboration with Fondazione Bruno Kessler (FBK), is aiming at the development of thin n-in-p type pixel sensors for the HL-LHC. The R&D covers both planar and single-sided 3D columnar pixel devices made with the Si-Si Direct Wafer Bonding technique, which allows for the production of sensors with 100 µm and 130 µm active thickness for planar sensors, and 130 µm for 3D sensors, the thinnest ones ever produced so far. Prototypes of hybrid modules, bumpbonded to the RD53A readout chip, have been tested on beam. First results on their performance before and after irradiation are presented.