1988
DOI: 10.1063/1.340099
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Characterization of phosphorus liquid-metal ion source as a dopant source in focused ion beam systems

Abstract: Characteristics of a phosphorus liquid-metal ion source (LMIS) for use in focused ion beam systems was investigated because of its potential as an n-type dopant for integrated circuit device fabrication. A continuous lifetime of more than 33 h was recorded as a part of the source stability measurement. Short-term stability measurements indicated a very stable beam emission during its operation. Three different emitter tip radii of 2.5, 5.0, and 10 μm were selected to examine phosphorus beam emission characteri… Show more

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Cited by 5 publications
(1 citation statement)
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“…The electrical properties and lattice disorder of FIB-implanted silicon also have been investigated and compared with broadbeam implantation (9,10). Different source alloys for dopants have been studied by others and the authors, e.g., 12), Pt-B (12-14), Pd-B (12,15), Pd-Ni-B ( 13), and B-Ni-Pt ( 16) for B; Cu-P (17,18) and Pd-As-B-P (19) for P; and Pt-As (19), Pd-As (20), and Sn-Pb-As (21) for As. These alloys have usually resulted in short lifetimes and/or small relative abundance of the dopant ions except for a few alloys, which have sometimes provided the same abundance and lifetime as those of the present alloys in Table I.…”
Section: Lmis Structurementioning
confidence: 99%
“…The electrical properties and lattice disorder of FIB-implanted silicon also have been investigated and compared with broadbeam implantation (9,10). Different source alloys for dopants have been studied by others and the authors, e.g., 12), Pt-B (12-14), Pd-B (12,15), Pd-Ni-B ( 13), and B-Ni-Pt ( 16) for B; Cu-P (17,18) and Pd-As-B-P (19) for P; and Pt-As (19), Pd-As (20), and Sn-Pb-As (21) for As. These alloys have usually resulted in short lifetimes and/or small relative abundance of the dopant ions except for a few alloys, which have sometimes provided the same abundance and lifetime as those of the present alloys in Table I.…”
Section: Lmis Structurementioning
confidence: 99%