Characterization of Phase-Change Material Using Verilog-A and its Validation as a Memory Element

Abstract

This paper presents SPICE modeling of Phase-change Random Access Memory (PCRAM). Different models of PCRAM have been already proposed but those models still lack capability to exactly model the behavior of PCRAM. In this paper we have introduced various physical parameters in the programming, to accurately model PCRAM behavior. The modeling of PCRAM cell has been done in Verilog-A and simulation results have been extensively verified using SPICE. Further, we have integrated the proposed model with the modified CNFET based read-write circuit. This paper emerges with the successful modeling of R-I characteristics of PCRAM. Read and write operations with proper programming pulses have also been demonstrated in this paper.

Investigating Phase Transform Behavior in Indium Selenide Based RAM and Its Validation as a Memory Element

“…With the rapid expansion of modern technologies, researchers have been motivated towards nonvolatile memory elements [1]. Nonvolatile elements such as spin transfer torque (STT) based magnetic tunnel junction (MTJ) and spin valve are promising candidates for nonvolatile Random Access Memory (MRAM) [2][3][4].…”

“…Phase change memory (PCM) technology has made rapid progress in a short time, having demonstrated low power consumption, nonvolatility, and compatibility with the present CMOS technology without having adverse scaling effects. Rapid switching, and prolonged data holding capacity and scalability characteristics of PCRAM match up with various potential applications across the memory-storage hierarchy [1]. PCM has capabilities to meet the requirements of nonvolatile memory design which has its potential applications in almost every electronic gadget used in our day-to-day lives.…”