Characterization of perovskite layer on various nanostructured silicon wafer

Rostan, Nur Fairuz Mohd; Sepeai, Suhaila; Ramli, Noor Fadhilah; Azhari, Ayu Wazira; Ludin, Norasikin Ahmad; Teridi, Mohd Asri Mat; Ibrahim, Mohd Adib; Zaidi, Saleem H.

doi:10.1063/1.4982192

Cited by 2 publications

(2 citation statements)

References 5 publications

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“…Perovskite-silicon tandem solar cells are a promising way for overcoming the single-cell efficiency limit. To date, only a few studies were dedicated to a direct investigation of immediate perovskite-silicon interface [1][2][3][4][5][6]. While in most tandem solar cell designs these two materials are not in direct contact, knowledge of the carrier transport and band alignment at their interface would allow for a better understanding of their compatibility and attainable performance levels, guiding the development of perovskite-silicon tandem solar cells in monolithic device architectures with adapted tunnel-recombination junctions between the two sub-cells.…”

Section: Introductionmentioning

confidence: 99%

Surface photovoltage characterisation of metal halide perovskite on crystalline silicon using Kelvin probe force microscopy and metal-insulator-semiconductor configuration

et al. 2022

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In this study we analysed halide perovskite films deposited directly on crystalline silicon by means of two set-ups using different operating modes of the surface photovoltage (SPV) methods, i.e., the Kelvin probe force microscopy (KPFM) and the metal-insulator-semiconductor (MIS) technique. The KPFM allowed to visualize surface potential distribution on a microscale while MIS technique allowed to study SPV spectral dependence. We studied wavelength dependent SPV of these samples, which allowed us to effectively vary the probe depth in the sample and discern the contribution from each interface to the overall effect measured under white light illumination. Depending on where the photocarriers are generated, different SPV signals are observed: at the perovskite/Si interface, the signal depends on Si doping type, while at the surface the SPV is always negative indicating downward surface band bending. This is confirmed by analysing SPV phase measured in the AC MIS mode. In addition, distinction between slow and fast processes contributing to measured SPV was possible. It has been observed, that with decreasing the illumination wavelength, the processes causing SPV become slower, which can indicate that high energy photons not only generate electronic photocarriers but can also induce chemical changes with creation of defects or ionic species that also modify the measured SPV.

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Section: Introductionmentioning

confidence: 99%

Surface photovoltage characterisation of metal halide perovskite on crystalline silicon using Kelvin probe force microscopy and metal-insulator-semiconductor configuration

et al. 2022

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“…Thus, c‐Si solar cell remains a dominant competitor within the solar cell industry and can steadily sustain for future needs. However, Si solar cell efficiency remains at 25% for the past 15 years and nearly hits the 30% theoretical limit . The indirect bandgap cell and incomplete optical absorption owing to low band (1.124 eV) contribute to a low light absorption and thus effecting efficiency of Si solar cell .…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic and morphology properties of perovskite/silicon interface layer for tandem solar cell application

Rostan

Sepeai

Yunus

et al. 2020

Surface & Interface Analysis

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Silicon (Si) solar cell has low optical absorption because of the low and indirect bandgap of Si, and the efficiency was trapped at 25% for 15 years. Si solar cell is able to achieve efficiency up to 30% by adding perovskite as multiple bandgap material through tandem formation. In this paper, the Si/perovskite interface layer was characterized to study the compatibility of perovskite on fluorine-doped tin oxide (FTO) glass and p-type Si wafer (p-Si). The single solution deposition step of methyl ammonium lead iodide, CH 3 NH 3 PbI 3 (MAPbI 3 ) perovskite film, was spin-coated at different concentration. The physical properties of the MAPbI 3 /FTO and MAPbI 3 /p-Si were obtained by profilometer, atomic force microscope, X-ray diffraction, and Raman spectroscopy. The optical properties were analyzed by ultraviolet-visible spectroscopy, photoluminescence, and infrared transmission. Then the electrical properties were measured by Hall effect. From the measurement, it is observed that 1.2M concentration of MAPbI 3 thin film has the highest thickness, smoothest film surface, and largest crystallite size compared with 0.8M and 1.0M. It is found that there is an interaction in perovskite/Si interface and caused in a low-wavelength shift, and the increase in concentration of MAPbI 3 helped in intensifying the Raman signal produced. 1.2M MAPbI 3 thin film had the highest enhancement in light trapping property rather than 0.8M and 1.0M. The bulk concentration and conductivity of 1.2M perovskite were higher, but the resistivity was lower than 0.8M MAPbI 3 because of more CH 3 NH 3 I and PbI 2 concentration within MAPbI 3 perovskite compound. K E Y W O R D SMAPbI 3 perovskite, perovskite/silicon, single deposition, solution process

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Characterization of perovskite layer on various nanostructured silicon wafer

Cited by 2 publications

References 5 publications

Surface photovoltage characterisation of metal halide perovskite on crystalline silicon using Kelvin probe force microscopy and metal-insulator-semiconductor configuration

Surface photovoltage characterisation of metal halide perovskite on crystalline silicon using Kelvin probe force microscopy and metal-insulator-semiconductor configuration

Optoelectronic and morphology properties of perovskite/silicon interface layer for tandem solar cell application

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