Characterization of Pd-nanocrystal-based nonvolatile memory devices

Abstract

Charge loss rate of Pd-nanocrystal (NC)-based nonvolatile memories is reduced about 60% by employing an asymmetric tunnel barrier composed of stacked SiO 2 and HfO 2 layers or insulating ZrO 2 NCs between Pd NCs. Keywords-Pd nanocrystal; nonvoltile memory; asymmetric tunnel barrier; ZrO 2 nanocrystalI.