Characterization of pattern geometrical effect on line end shortening in x-ray lithography

Yi, Moonsuk

doi:10.1116/1.590488

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

1998

DOI: 10.1116/1.590488

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Characterization of pattern geometrical effect on line end shortening in x-ray lithography

Moonsuk Yi

Abstract: Articles you may be interested inExtreme expansion of proximity gap by double exposures using enlarged pattern masks for line and space pattern formation in x-ray lithography (evolution of exposure method to symmetric illumination)

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Characterization of pattern geometrical effect on line end shortening in x-ray lithography

Abstract: Articles you may be interested inExtreme expansion of proximity gap by double exposures using enlarged pattern masks for line and space pattern formation in x-ray lithography (evolution of exposure method to symmetric illumination)

Cited by 0 publications

References 18 publications

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