Abstract:In this paper, based on first‐principles calculations, we have carried out a comprehensive study of substitutional oxygen defects in hexagonal silicon nitride (β‐Si3N4). First of all, it is found that substitutional oxygens tend to form clusters at three different sites due to the intensive attractive interaction. By analyzing modified Bader charge and trap energy, we next discuss retention characteristic of the three clusters. The results manifest that all of the clusters are amphoteric defects with the abili… Show more
“…The Bader charge estimates the nearbyc harges of an atom by calculating the charges that are enclosed within the Bader volume. [33] Figure 4s (Figure 4). This can be viewed as the occurrence of subvalent Bi in an undercoordinated geometry.…”
Section: Resultsmentioning
confidence: 99%
“… was confirmed to be the most stable oxygen vacancy by calculating the formation energies of the five systems containing oxygen vacancies (Table S2 in the Supporting Information); this is consistent with experimental results. The Bader charge estimates the nearby charges of an atom by calculating the charges that are enclosed within the Bader volume . Figure shows the amount of charges of all Bi atoms in Bi 2 SrTa 2 O 9 , with serial numbers (nos.…”
Aurivillius phases have been routinely known as excellent ferroelectrics and have rarely been deemed as materials that luminesce in the near-infrared (NIR) region. Herein, it is shown that the Aurivillius phases can demonstrate broadband NIR luminescence that covers telecommunication and biological optical windows. Experimental characterizationo ft he model system Bi 2.14 Sr 0.75 Ta 2 O 9Àx ,c ombined with theoretical calculations, help to establish that the NIR luminescence originates from defective [Bi 2 O 2 ] 2 + layers. Importantly,t he generality of this finding is validated based on observations of ar ichb ank of NIR luminescence characteristics in other Aurivillius phases.T his work highlightst hat incorporating defects into infinitely repeating [Bi 2 O 2 ] 2 + layers can be used as ap owerful tool to space-selectively impart unusuall uminescence emitterst oA urivillius-phase ferroelectrics, which not only offers an optical probe for the examination of defectstates in ferroelectrics, buta lso provides possibilities for coupling of the ferroelectric property with NIR luminescence.
“…The Bader charge estimates the nearbyc harges of an atom by calculating the charges that are enclosed within the Bader volume. [33] Figure 4s (Figure 4). This can be viewed as the occurrence of subvalent Bi in an undercoordinated geometry.…”
Section: Resultsmentioning
confidence: 99%
“… was confirmed to be the most stable oxygen vacancy by calculating the formation energies of the five systems containing oxygen vacancies (Table S2 in the Supporting Information); this is consistent with experimental results. The Bader charge estimates the nearby charges of an atom by calculating the charges that are enclosed within the Bader volume . Figure shows the amount of charges of all Bi atoms in Bi 2 SrTa 2 O 9 , with serial numbers (nos.…”
Aurivillius phases have been routinely known as excellent ferroelectrics and have rarely been deemed as materials that luminesce in the near-infrared (NIR) region. Herein, it is shown that the Aurivillius phases can demonstrate broadband NIR luminescence that covers telecommunication and biological optical windows. Experimental characterizationo ft he model system Bi 2.14 Sr 0.75 Ta 2 O 9Àx ,c ombined with theoretical calculations, help to establish that the NIR luminescence originates from defective [Bi 2 O 2 ] 2 + layers. Importantly,t he generality of this finding is validated based on observations of ar ichb ank of NIR luminescence characteristics in other Aurivillius phases.T his work highlightst hat incorporating defects into infinitely repeating [Bi 2 O 2 ] 2 + layers can be used as ap owerful tool to space-selectively impart unusuall uminescence emitterst oA urivillius-phase ferroelectrics, which not only offers an optical probe for the examination of defectstates in ferroelectrics, buta lso provides possibilities for coupling of the ferroelectric property with NIR luminescence.
“…51 While, the modified Bader charge, 51 which can be obtained by the subtraction of atom's Bader charge in charged state (+/-) and neutral state, is a good way to obtain the deeper insight into the localization of the written charges. It is noted that there are three basic states during a P/E cycle: neutral state, charged state, after-erased state.…”
With the growing application of high-k dielectrics, the interface between HfO2 and Al2O3 play a crucial role in CTM devices. To clearly understand the interaction of the HfO-AlO interface at the atomic and electronic scale, the bonding feature, electronic properties and charge localized character of c- HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface has been investigated by first principle calculations. The c- HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface has adhesive energy about -1.754 J/m2, suggesting that this interface can exist stably. Through analysis of Bader charge and charge density difference, the intrinsic interfacial gap states are mainly originated from the OII and OIII types oxygen atoms at the interface, and only OIII type oxygen atoms can localized electrons effectively and are provided with good reliability during P/E cycles, which theoretically validate the experimental results that HfO2/Al2O3 multi-layered charge trapping layer can generate more effective traps in memory device. Furthermore, the influence of interfacial gap states during P/E cycles in the defective interface system have also been studied, and the results imply that defective system displays the degradation on the reliability during P/E cycles, while, the charge localized ability of interfacial states is stronger than intrinsic oxygen vacancy in the trapping layer. Besides, these charge localized characters are further explained by the analysis of the density of states correspondingly. In sum, our results compare well with similar experimental observations in other literatures, and the study of the interfacial gap states in this work would facilitate further development of interface passivation.
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