Characterization of oxygen and nitrogen rapid thermal annealing processes for ultra-low-<i>k</i> SiCOH films

Lee, Sung‐Woo; Jung, Donggeun; Yang, Jaeyoung; Boo, Jin‐Hyo; Kim, Hyoungsub; Lee, Jaewon; Chae, Heeyeop

doi:10.1557/jmr.2008.0106

Cited by 11 publications

(13 citation statements)

References 15 publications

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“…Drastically improved hardness and modulus have been observed in ultralow‐ k PECVD films copolymerized from decamethylcyclopentasiloxane and cyclohexane precursors that had undergone rapid thermal annealing >450 °C in oxygen ambient 27. The oxidation of the SiCH 3 was believed to increase the average film connectivity number, which correlates with improved mechanical properties 28.…”

Section: Resultsmentioning

confidence: 99%

Ultralow Dielectric Constant Tetravinyltetramethylcyclotetrasiloxane Films Deposited by Initiated Chemical Vapor Deposition (iCVD)

Trujillo

Gleason

2010

Adv Funct Materials

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Simultaneous improvement of mechanical properties and lowering of the dielectric constant occur when films grown from the cyclic monomer tetravinyltetramethylcyclotetrasiloxane (V4D4) via initiated chemical vapor deposition (iCVD) are thermally cured in air. Clear signatures from silsesquioxane cage structures in the annealed films appear in the Fourier transform IR (1140 cm−1) and Raman (1117 cm−1) spectra. The iCVD method consumes an order of magnitude lower power density than the traditional plasma‐enhanced CVD, thus preserving the precursor's delicate ring structure and organic substituents in the as‐deposited films. The high degree of structural retention in the as‐deposited film allows for the beneficial formation of intrinsically porous silsesquioxane cages upon annealing in air. Complete oxidation of the silicon creates ‘Q’ groups, which impart greater hardness and modulus to the films by increasing the average connectivity number of the film matrix beyond the percolation of rigidity. The removal of labile hydrocarbon moieties allows for the oxidation of the as‐deposited film while simultaneously inducing porosity. This combination of events avoids the typical trade‐off between improved mechanical properties and higher dielectric constants. Films annealed at 410 °C have a dielectric constant of 2.15, and a hardness and modulus of 0.78 and 5.4 GPa, respectively. The solvent‐less and low‐energy nature of iCVD make it attractive from an environmental safety and health perspective.

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Section: Resultsmentioning

confidence: 99%

Ultralow Dielectric Constant Tetravinyltetramethylcyclotetrasiloxane Films Deposited by Initiated Chemical Vapor Deposition (iCVD)

Trujillo

Gleason

2010

Adv Funct Materials

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“…Strong absorption peaks are also observed at the range 1800–1200 cm −1 from organic moieties such as CH 3 , C=O and C=C groups. 55 , 53 Again, as with Samples D and F, new peaks were observed in the difference FTIR spectrum, demonstrating that the POSS backbone chemically restructured, probably to form segregated hydrogenated carbon domains when the samples were heated to 200°C. Also, it appears that new polar dangling bonds and condensation reactions occurred, as indicated by the peaks formed in 2200–1000 cm −1 range in the difference spectrum for Sample E.…”

Section: Resultsmentioning

confidence: 79%

Broadband Dielectric Spectroscopic Characterization of Thermal Stability of Low-k Dielectric Thin Films for Micro- and Nanoelectronic Applications

Sunday

Montgomery

Amoah

et al. 2017

ECS J. Solid State Sci. Technol.

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In this paper, we discuss the use of broadband microwaves (MW) to characterize the thermal stability of organic and hybrid silicon-organic thin films meant for insulation applications in micro- and nanoelectronic devices. We take advantage of MW propagation characteristics to extract and examine the relationships between electrical properties and the chemistry of prototypical low-k materials. The impact of thermal anneal at modest temperatures is examined to shed light on the thermal-induced performance and reliability changes within the dielectric films. These changes are then correlated with the chemical changes in the films, and could provide basis for rational selection of organic dielectrics for integrated devices.

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“…4 (a)). [13][14][15][16] The CH 2 peaks provide direct evidence of ethylene groups from cyclohexane in the SiCOH films. CH x showed significant increase at 25-40 C and decrease from 40 to 100 C. Above 100 C, its intensity was relatively insensitive to temperature.…”

Section: Resultsmentioning

confidence: 99%

“…Various siloxane and hydrocarbon molecules were tested for low-k dielectric films. [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] In this work decamethylcyclopentasiloxane (DMCPSO, C 10 H 30 O 5 Si 5 was selected as a silicon oxide precursor and cyclohexane (C 6 H 12 as a hydrocarbon precursor. These molecules can form nanoscale molecular pores due to the molecular ring structures resulting in dielectric constant reduction.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Low-k Dielectric SiCOH Films Deposited with Decamethylcyclopentasiloxane and Cyclohexane

Kim

Kim²,

Jang³

et al. 2012

j nanosci nanotechnol

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Ultra low-k dielectric SiCOH films were deposited with decamethylcyclopentasiloxane (DMCPSO, C10H30O5Si5) and cyclohexane (C6H12) precursors by plasma-enhanced chemical vapor deposition at the deposition temperature between 25 and 200 degrees C and their chemical composition and deposition kinetics were investigated in this work. Low dielectric constants of 1.9-2.4 were obtained due to intrinsic nanoscale pores originating from the relatively large ring structure of DMCPSO and to the relatively large fraction of carbon contents in cyclohexane. Three different deposition regions were identified in the temperature range. Deposition rates increased with temperature below 40 degrees C and decreased as temperature increased to 75 degrees C with apparent activation energies of 56 kJ/mol x K at < 40 degrees C, -26 kJ/mol x K at 40-100 degrees C, respectively. In the temperature region of 40-100 degrees C hydrocarbon deposition and decomposition process compete each other and decomposition becomes dominant, which results in apparent negative activation energy. Deposition rates remain relatively unaffected with further increases of temperature above 100 degrees C. FTIR analysis and deposition kinetic analysis showed that hydrocarbon deposition is the major factor determining chemical composition and deposition rate. The hydrocarbon deposition dominates especially at lower temperatures below 40 degrees C and Si-O fraction increases above 40 degrees C. We believe that dielectric constants of low-k films can be controlled by manipulating the fraction of deposited hydrocarbon through temperature control.

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Characterization of oxygen and nitrogen rapid thermal annealing processes for ultra-low-k SiCOH films

Cited by 11 publications

References 15 publications

Ultralow Dielectric Constant Tetravinyltetramethylcyclotetrasiloxane Films Deposited by Initiated Chemical Vapor Deposition (iCVD)

Ultralow Dielectric Constant Tetravinyltetramethylcyclotetrasiloxane Films Deposited by Initiated Chemical Vapor Deposition (iCVD)

Broadband Dielectric Spectroscopic Characterization of Thermal Stability of Low-k Dielectric Thin Films for Micro- and Nanoelectronic Applications

Characterization of Low-k Dielectric SiCOH Films Deposited with Decamethylcyclopentasiloxane and Cyclohexane

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