“…The e-beam fabrication of microscale IDAs with gaps ranging from 1 tm to 300 nm has been reported [1]. In another more recent work, nano-IDAs with electrode widths and spacings ranging from 550 nm down to 250 nm have been realized [2,3]. The latter approach was based on the e-beam lithography while the former combined e-beam lithography, isotropic etching and standard lithography.…”
Section: Introductionsupporting
confidence: 94%
“…At high frequencies, a stray capacitance of the bottom Si3N4 passivation layer becomes predominant. These results agree well with the previously reported model [3].…”
Thin-film Pt nano interdigitated electrodes realized by combining e-beam lithography and standard photolithography are presented. The resulting nano-IDAs have an active area of 76 tm x 100 jtm, an electrode pitch of 785 nm and a gap of 250 nm. The initial results show that this technology is well adapted for the realization of sub-micrometer metallic structures.
“…The e-beam fabrication of microscale IDAs with gaps ranging from 1 tm to 300 nm has been reported [1]. In another more recent work, nano-IDAs with electrode widths and spacings ranging from 550 nm down to 250 nm have been realized [2,3]. The latter approach was based on the e-beam lithography while the former combined e-beam lithography, isotropic etching and standard lithography.…”
Section: Introductionsupporting
confidence: 94%
“…At high frequencies, a stray capacitance of the bottom Si3N4 passivation layer becomes predominant. These results agree well with the previously reported model [3].…”
Thin-film Pt nano interdigitated electrodes realized by combining e-beam lithography and standard photolithography are presented. The resulting nano-IDAs have an active area of 76 tm x 100 jtm, an electrode pitch of 785 nm and a gap of 250 nm. The initial results show that this technology is well adapted for the realization of sub-micrometer metallic structures.
“…Such values are greater than previous reports which demonstrate approximately 0.4% active sites (Salinastorres et al, 2011). Thus, the porous nature of the VANTA IDEs significantly raises the electroactive surface area above a conventional solid or planar IDE sensor (Laureyn et al, 2001) and provides more carbon-carbon defects or active sites than conventional CNT electrodes (Banks et al, 2005(Banks et al, , 2004.…”
Section: Fabrication and Electrochemical Characterization Of Vanta Idementioning
Vertically aligned carbon nanotube array (VANTA) coatings have recently garnered much attention due in part to their unique material properties including light absorption, chemical inertness, and electrical conductivity. Herein we report the first use of VANTAs grown via chemical vapor deposition in a 2D interdigitated electrode (IDE) footprint with a high heightto-width aspect ratio (3:1 or 75:25 µm). The VANTA-IDE is functionalized with an antibody (Ab) specific to the human cancerous inhibitor PP2A (CIP2A)-a salivary oncoprotein that is associated with a variety of malignancies such as oral, breast, and multiple myeloma cancers.The resultant immunosensor is capable of detecting CIP2A label-free across a wide linear sensing range (1 -100 pg/mL) with a detection limit of 0.24 pg/mL within saliva supernatant-a range that is more sensitive than the corresponding CIP2A enzyme linked immunosorbent assay (ELISA). These results help pave the way for rapid cancer screening tests at the point-of-care (POC) such as for the early-stage diagnosis of oral cancer at a dentist's office.
Table of Content (ToC) Image Description: (Left) Schematic diagram showing antibody functionalized (anti-CIP2A) vertically aligned carbon nanotubes (VANTAs) arrayed in an interdigitated electrode (IDE) footprint. (Left Inset) An optical image of a VANTA IDE immunosensor fabricated on silicon wafer. (Right) Electrochemical impedance sensing of CIP2A antigen concentrations with the biofunctionalized VANTA IDEs.
“…To contribute to the advancement of this relevant and timely field of research, the present article is devoted to the extraction of an equivalent-circuit model and to the resonance-based investigation of the permittivity sensitivity, considering as case study a one-port coplanar interdigital capacitor (IDC) aimed at microfluidic broadband bioelectronics applications. Over the past few decades, interest in capacitors based on interdigital electrodes (IDE) has expanded from the traditional applications in communication systems [42] to the more recent ones in the biosensing field [12,30,37,[43][44][45][46]. Although a few studies have been reported on exploiting this resonance of the IDC structure for biosensing purpose [45], the biomaterial characterization is advantageous at relatively low frequencies to avoid the onset of IDC self-resonance effects [37].…”
Electronics is a field of study ubiquitous in our daily lives, since this discipline is undoubtedly the driving force behind developments in many other disciplines, such as telecommunications, automation, and computer science. Nowadays, electronics is becoming more and more widely applied in life science, thus leading to an increasing interest in bioelectronics that is a major segment of bioengineering. A bioelectronics application that has gained much attention in recent years is the use of sensors for biological samples, with emphasis given to biosensors performing broadband sensing of small-volume liquid samples. Within this context, this work aims at investigating a microfluidic sensor based on a broadband one-port coplanar interdigital capacitor (IDC). The microwave performance of the sensor loaded with lossless materials under test (MUTs) is achieved by using finite-element method (FEM) simulations carried out with Ansoft's high frequency structure simulator (HFSS). The microfluidic channel for the MUT has a volume capacity of 0.054 µL. The FEM simulations show a resonance in the admittance that is reproduced with a five-lumped-element equivalent-circuit model. By changing the real part of the relative permittivity of the MUT up to 70, the corresponding variations in both the resonant frequency of the FEM simulations and the capacitance of the equivalent-circuit model are analyzed, thereby enabling assessment of the permittivity sensitivity of the studied IDC. Furthermore, it is shown that, although the proposed local equivalent-circuit model is able to mimic faithfully the FEM simulations locally around the resonance in the admittance, a higher number of circuit elements can achieve a better agreement between FEM and equivalent-circuit simulation over the entire broad frequency going range from 0.3 MHz to 35 GHz.
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