Characterization of Nanocrystals Using Spectroscopic Ellipsometry

Petrik, P.

doi:10.5772/48732

Cited by 11 publications

(8 citation statements)

References 25 publications

(26 reference statements)

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“…Although such nanocrystal-based structures can be investigated using different thin-film characterization methods, among optical methods ellipsometry was shown to be very capable for nanocrystal measurement [11,12,13,14] providing numerous advantages. The high sensitivity combined with the high speed and the non-destructive nature results in two main capabilities: (1) The sample properties can be quickly and non-destructively qualified as well as mapped on large surfaces; (2) Based on the non-destructive nature and the in situ application, there is a possibility to follow the transformation of the sample structure during deposition and/or annealing.…”

Section: Introductionmentioning

confidence: 99%

Optical and structural characterization of Ge clusters embedded in ZrO2

Agócs

Zolnai

Rossall

et al. 2017

Applied Surface Science

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The change of optical and structural properties of Ge nanoclusters in ZrO 2 matrix have been investigated by spectroscopic ellipsometry versus annealing temperatures. Radio-frequency top-down magnetron sputtering approach was used to produce the samples of different types, i.e. single-layers of pure Ge, pure ZrO 2 and Ge-rich-ZrO 2 as well as multi-layers stacked of 40 periods of 5-nm-Ge-rich-ZrO 2 layers alternated by 5-nm-ZrO 2 ones. Germanium nanoclusters in ZrO 2 host were formed by rapid-thermal annealing at 600-800 • C during 30 s in nitrogen atmosphere. Reference optical properties for pure ZrO 2 and pure Ge have been extracted using single-layer samples. Asdeposited multi-layer structures can be perfectly modeled using the effective medium theory. However, annealed multi-layers demonstrated a significant diffusion of elements that was confirmed by medium energy ion scattering measurements. This fact prevents fitting of such annealed structure either by homogeneous or by periodic multi-layer models.

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Section: Introductionmentioning

confidence: 99%

Optical and structural characterization of Ge clusters embedded in ZrO2

Agócs

Zolnai

Rossall

et al. 2017

Applied Surface Science

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“…In this work two major aspects of optical nanocrystal measurements are discussed. The first one is a survey of the parameterizations of the dielectric function [1,2,3,4] from the effective medium approximation to model dielectric functions, also in combination. The second one is the use of parameter search algorithms that helps to avoid or at least to minimize the probability of getting into local minima during the fitting of numerous model parameters [4,5,6,7].…”

Section: Introductionmentioning

confidence: 99%

(Invited) High Sensitivity Optical Characterization of Thin Films with Embedded Si Nanocrystals

Petrik

Agócs

2013

ECS Trans.

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Optical techniques that use a spectral range of photon energies larger than the band gap are very sensitive for structural characterization of semiconductor nanocrystals. Techniques that can measure the change of polarization during reflection from bulk or thin film samples reveal high sensitivity for both the layer thickness and the refractive index. From one spectroscopic ellipsometric measurement performed in a range of 0.7-6.5 eV within 1 s using a standard multi-channel ellipsometer not only the thickness and the dielectric function of the film, but a range of derived material properties like the crystallinity or the size and volume fraction of nanocrystals can be determined indirectly. The quality of the measurement is not any more a question of instrumentation, but rather a question of interpretation and proper modeling. In this paper we summarize what parameters can be determined, and we present a method for the reliable fitting of numerous parameters.

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“…Ellipsometry offers great promise for characterization, monitoring, and control of a wide variety of processes, especially in semiconductor related areas [1][2][3][4][5][6][7][8][9][10][11][12] …”

Section: Spectroscopic Ellipsometry (Se) In Photovoltaicsmentioning

confidence: 99%

Expanded beam spectro-ellipsometry for big area on-line monitoring

et al. 2015

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Non-destructive analysing tools are needed at all stages of thin film process-development, especially photovoltaic (PV) development, and on production lines. In the case of thin films, layer thicknesses, micro-structure, composition, layer optical properties, and their uniformity are important parameters. An important focus is to express the dielectric functions of each component material in terms of a handful of wavelength independent parameters whose variation can cover all process variants of that material. With the resulting database, spectroscopic ellipsometry coupled with multilayer analysis can be developed for on-line point-by-point mapping and on-line line-by-line imaging. Off-line point-by-point mapping can be effective for characterization of non-uniformities in full scale PV panels or big area (even 450 mm diameter) Si-wafers in developing labs but it is slow in the on-line mode when only 15 points can be obtained (within 1 min) as a 120 cm long panel moves by the mapping station. Last years [M. Fried et al, Thin Solid Films 519, 2730], a new instrumentation was developed that provides a line image of spectroscopic ellipsometry (wl=350-1000 nm) data. Earlier a single 30 point line image could be collected in 10 s over a 15 cm width of PV material. Recent years we have built a 30, a 45 and a 60 cm width expanded beam ellipsometer which speed is increased by 10x. Now, 1800 points can be mapped in a 1 min traverse of a 60*120 cm PV panel or flexible roll-to-roll substrate.

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Characterization of Nanocrystals Using Spectroscopic Ellipsometry

Cited by 11 publications

References 25 publications

Optical and structural characterization of Ge clusters embedded in ZrO2

Optical and structural characterization of Ge clusters embedded in ZrO2

(Invited) High Sensitivity Optical Characterization of Thin Films with Embedded Si Nanocrystals

Expanded beam spectro-ellipsometry for big area on-line monitoring

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