Characterization of n-GaN / p-GaAs NP heterojunctions

Hernández-Gutiérrez, C.A.; Casallas-Moreno, Y.L.; Cardona, Dagoberto; Kudriavtsev, Yu.; Santana, Gregório Mateus; Mendoza-Pérez, R.; Contreras‐Puente, G.; Méndez-García, V.H.; Gallardo-Hernández, S.; Quevedo‐Lopez, Manuel; López‐López, M.

doi:10.1016/j.spmi.2019.106298

Cited by 14 publications

(5 citation statements)

References 16 publications

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“…GaN has a wide application and is not only limited to power electronics. Due to GaNs ability to conduct electrons more efficiently than silicon, GaN is also used in radio, light-emitting diode [24][25][26], in HEMTs [27], laser photodiode detectors [28], and radiation detectors [29].…”

Section: Problem With Using Gan As a Secondary Rectifiermentioning

confidence: 99%

High Step-Up Flyback with Low-Overshoot Voltage Stress on Secondary GaN Rectifier

et al. 2022

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This paper presents a new technique to mitigate the high voltage stress on the secondary gallium nitride (GaN) transistor in a high step-up flyback application. GaN devices provide a means of achieving high efficiency at hundreds (and thousands) of kHz of switching frequency. Presently however, commercially available GaN is limited to only a 650 V absolute voltage rating. Such a limitation is challenging in high step-up flyback applications due to the secondary leakage. The leakage imposes high voltage stress on the secondary GaN rectifier during its turn-off transient. Such stress may cause irreversible damage to the GaN device. A new method of leakage bypass is presented to mitigate the high voltage stress issue. The experimental results suggest that when compared to conventional secondary active clamp, a 2.3-fold reduction in overshoot voltage stress percentage is achievable with the technique. As a result, it is possible to utilize GaN as the rectifier while keeping the peak voltage stress within the 650 V limitation with the technique.

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Section: Problem With Using Gan As a Secondary Rectifiermentioning

confidence: 99%

High Step-Up Flyback with Low-Overshoot Voltage Stress on Secondary GaN Rectifier

et al. 2022

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“…To achieve this optimization, we consider a single crystal homogenous doping in each layer, which can be obtained by epitaxial techniques such as molecular beam epitaxy (MBE). 17 The transport properties of the n-layer are based on Rode et al model, 18 and the simulation of mobility versus free electron concentration is shown in Fig. 3.…”

Section: Physical Model and Spice Codementioning

confidence: 99%

“…As is observed from the figure, the photodetector is a c-GaN homojunction in which the dimension and carrier concentrations must be optimized to detect UVC light radiation. To achieve this optimization, we consider a single crystal homogenous doping in each layer, which can be obtained by epitaxial techniques such as molecular beam epitaxy (MBE) 17 . The transport properties of the n-layer are based on Rode et al.…”

Section: Physical Model and Spice Codementioning

confidence: 99%

Theoretical modeling and design aspects of cubic-phase GaN homojunction-based UVC light sensor

et al. 2022

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We designed a cubic-phase gallium nitride (c-GaN) homojunction for ultraviolet-C (UVC) detection. A physical model approach was employed to design the dimensions of the detector and the doping concentrations of each layer. The calculated electrical and optoelectronic properties were employed to perform a simulation program with integrated circuit emphasis (SPICE) equivalent circuit model to integrate c-GaN photodetection capabilities into a CAD electronic simulator. The model allows estimating the transport properties in the darkness and under ultraviolet (UV) illumination conditions. Furthermore, the effect of depletion capacitance was taken into account thinking in the circuitry amplification stage. When a transient UVC flash occurs, the SPICE simulation revealed that the output signal is in the order of 300 μV, which is suitable to be amplified by a transimpedance amplifier.

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“…AlN and GaN have wide band gaps of 6.2 and 3.4 eV, respectively, and have been actively considered for applications of blue and ultraviolet (UV) LEDs. − AlN has also received much interest due to its high thermal conductivity of ∼285 W/mK for heat dissipation in high-power devices. − Furthermore, GaN has attracted interest owing to electronic properties such as high electron mobility of 1500 cm 2 /V·s and high carrier density of 4 × 10 16 /cm 3 at room temperature for high-frequency and high-power HEMTs. − In addition to the binary wurtzite III–V nitrides, Al x Sc 1– x N (from x = 0 to 0.4) alloy is also attracting interest due to its high piezoelectricity, which is needed for variable-frequency RF filters. − …”

Section: Introductionmentioning

confidence: 99%

First-Principles Understanding on the Formation of Inversion Domain Boundaries of Wurtzite AlN, AlScN, and GaN

Hwang,

Aigner,

Metzger

et al. 2024

ACS Appl. Electron. Mater.

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Inversion domain boundaries (IDBs) are the major planar defect in piezoelectric wurtzite structures such as AlN, AlScN, and GaN. The IDBs are often found in deposited thin films and are known to be closely related to the performance of the films. However, the detailed atomic and electronic structures of IDBs have not been modeled. In the present study, the atomic structures, thermodynamic stabilities, and electronic and mechanical properties of IDBs in AlN, AlScN, and GaN were modeled using firstprinciples calculations. The result shows that IDB formation is favorable when the piezo strain tensor (d 33 ) is high. AlScN is particularly favorable for IDB formation due to its higher piezo strain tensor and lower bulk modulus compared to AlN and GaN. Furthermore, the structural distortion in IDBs is closely related to an electronic structure change reducing the band gap, thereby increasing leakage current in a piezoelectric device.

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Characterization of n-GaN / p-GaAs NP heterojunctions

Cited by 14 publications

References 16 publications

High Step-Up Flyback with Low-Overshoot Voltage Stress on Secondary GaN Rectifier

High Step-Up Flyback with Low-Overshoot Voltage Stress on Secondary GaN Rectifier

Theoretical modeling and design aspects of cubic-phase GaN homojunction-based UVC light sensor

First-Principles Understanding on the Formation of Inversion Domain Boundaries of Wurtzite AlN, AlScN, and GaN

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