Characterization of multilayered Ti/TiN films grown by chemical vapor deposition

Hu, Jiumei; Chang, T. C.; Chen, L.J.; Yang, Yunpeng; Chang, Chih‐Yung

doi:10.1016/s0040-6090(98)01018-9

Cited by 17 publications

(6 citation statements)

References 6 publications

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“…2. Although the deposition temperature of TiN film was very low, the chlorine content in this TiN film was substantially lower (below 0.5 at.%) than that in the films grown by other CVD methods which contained 2-14 at.% of Cl [11][12][13] (14 at.% at 300 • C, 5.7 at.% at 500 • C, 2 at.% at 600 • C, < 2 at.% at 630 • C). The reason was that in the ALD system, the self-limiting reaction by the separated introduction of each reactant and purge gas causes the complete surface reaction during deposition which results in the very low contents of impurities.…”

Section: Resultsmentioning

confidence: 77%

TiN Diffusion Barrier Grown by Atomic Layer Deposition Method for Cu Metallization

Uhm

Jeon

2001

Jpn. J. Appl. Phys.

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The effects on the impurity content, microstructure, resistivity and barrier characteristics of TiN film deposited by an atomic layer deposition (ALD) method have been evaluated. The TiN films were deposited on Si(100) substrates at 450 • C using the reactant gases TiCl 4 and NH 3 . The chemical and physical properties of ALD TiN thin films were measured. The TiN films had a randomly-oriented columnar grain microstructure. The chlorine content in the films was below the detection limit of Auger electron spectroscopy (< 0.5 at.%) due to the complete surface reaction by self-limiting reaction in ALD method. This low Cl content in film induced a low film resistivity of 120 µ cm. The barrier properties of this ALD films were tested by the etch-pit method. The result showed a retardation of the interdiffusion between Cu and Si in samples annealed for one hour at temperatures up to 450 • C.

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Section: Resultsmentioning

confidence: 77%

TiN Diffusion Barrier Grown by Atomic Layer Deposition Method for Cu Metallization

Uhm

Jeon

2001

Jpn. J. Appl. Phys.

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“…Some past studies on TiN deposition have also reported the use of X-ray diffraction techniques for the characterization of the films, ,,,,,, but in none of those were structures other than TiN identified. However, two issues need to be considered here.…”

Section: Discussionmentioning

confidence: 99%

“…Ti 3 N 4 is thermodynamically less stable than TiN, at least at low pressures, 38 but its formation has been suggested in other film deposition studies. [39][40][41] Some past studies on TiN deposition have also reported the use of X-ray diffraction techniques for the characterization of the films, 15,20,21,36,37,42,43 but in none of those were structures other than TiN identified. However, two issues need to be considered here.…”

Section: Discussionmentioning

confidence: 99%

Surface Chemistry in the Atomic Layer Deposition of TiN Films from TiCl₄ and Ammonia

Tiznado

Zaera

2006

J. Phys. Chem. B

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The surface chemistry of atomic layer depositions (ALD) of titanium nitride films using alternate doses of TiCl4 and NH3 was characterized by using X-ray photoelectron spectroscopy. The nature of the species deposited by each half-reaction was explored first. Evidence was obtained for the partial loss of chlorine atoms and the reduction of the metal during the adsorption of the TiCl4. Subsequent ammonia treatment removes most of the remaining chlorine and leads to the formation of a nitride. Both half-reactions were proven self-limited, stopping after the deposition of submonolayer quantities of the materials. Repeated ALD cycles were shown to lead to the buildup of thick films. However, those films display a Ti3N4 layer on top of the expected TiN. The data suggest that the reduction of the Ti4+ species may therefore occur during the TiCl4, not NH3, dosing step. The incorporation of impurities in the films was also investigated. Chlorine is only deposited on the surface, and in negligible quantities. This Cl appears to originate from readsorption of the HCl byproduct, and could be removed by light sputtering, heating, or further ammonia treatment. Oxygen incorporation, on the other hand, was unavoidable and was determined to possibly come from diffusion from the underlying substrate.

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“…A combination of multilayered Ti/TiN and plasma posttreatment technique was found to reduce the resistivity and concentration of chlorine in TiN films. 8 The grain structure of TiN film was found to be columnar. When the TiN film was used as a barrier layer, Al and Si would interdiffuse through the grain boundaries of the TiN film after annealing at elevated temperature.…”

Section: Introductionmentioning

confidence: 96%

Investigation on multilayered chemical vapor deposited Ti/TiN films as the diffusion barriers in Cu and Al metallization

Hu¹,

Chang²,

Chen³

et al. 1999

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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A novel multilayered chemical vapor deposition ͑CVD͒ Ti/TiN structure was found to be a more effective diffusion barrier in Cu metallization than TiN alone. The Ti and TiN films were deposited by plasma enhanced CVD and low pressure CVD, respectively. In order to reduce the concentration of chlorine in the films, NH 3 plasma posttreatment was applied to multilayered CVD-Ti/TiN films. The resistivity of the film was reduced from 240 to 120 ⍀ cm using NH 3 plasma posttreatment. Cu was electroplated on the multilayered CVD-Ti/TiN films. X-ray diffraction patterns showed a small ͑002͒ peak and strong ͑111͒ peak from the Cu film. The leakage current was kept low during the device application test indicating the Ti/TiN film possessed an enhanced barrier property over the TiN film alone.

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Characterization of multilayered Ti/TiN films grown by chemical vapor deposition

Cited by 17 publications

References 6 publications

TiN Diffusion Barrier Grown by Atomic Layer Deposition Method for Cu Metallization

TiN Diffusion Barrier Grown by Atomic Layer Deposition Method for Cu Metallization

Surface Chemistry in the Atomic Layer Deposition of TiN Films from TiCl₄ and Ammonia

Investigation on multilayered chemical vapor deposited Ti/TiN films as the diffusion barriers in Cu and Al metallization

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Characterization of multilayered Ti/TiN films grown by chemical vapor deposition

Cited by 17 publications

References 6 publications

TiN Diffusion Barrier Grown by Atomic Layer Deposition Method for Cu Metallization

TiN Diffusion Barrier Grown by Atomic Layer Deposition Method for Cu Metallization

Surface Chemistry in the Atomic Layer Deposition of TiN Films from TiCl4 and Ammonia

Investigation on multilayered chemical vapor deposited Ti/TiN films as the diffusion barriers in Cu and Al metallization

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Surface Chemistry in the Atomic Layer Deposition of TiN Films from TiCl₄ and Ammonia