Characterization of MOCVD-Prepared CIS Solar Cells

Abstract

Chalcopyrite Cu(In,Ga)Se2 (CIGS) solar cells prepared via metal-organic chemical vapor deposition (MOCVD) are one of the candidates for highly advanced photovoltaic devices. This is because of their effectiveness and potential for reducing production costs through large-scale production. However, research on MOCVD-prepared solar cells is progressing slower than that on other types of solar cells, primarily because the preparation of CuInSe2 (CIS)-based films via MOCVD is relatively more sophisticated. In this study, we analyzed CIS solar cells prepared via three-stage MOCVD and processed with relatively simple precursors and techniques. We achieved an energy-conversion efficiency of 7.39% without applying a buffer layer. Instead, we applied a Cu-deficient layer to create a buried pn junction. Ultimately, we demonstrated that the fabrication of fully-MOCVD-processed CIS photovoltaic devices is feasible.

Inorganic Nanocrystal Solar Cells

“…In conclusion, the articles in this Special Issue show the latest progress achieved in renewable energy technologies, especially regarding solar cells. There is no doubt that these articles [1][2][3][4] present exciting and significant research results, as well as make contributions to renewable energy research fields, allowing us to take another step toward achieving a zero-carbon society.…”

“…Seung Hoon Lee et al [2] demonstrated detailed methods and results from an analysis of CIS solar cells, which are prepared by unique and advanced technology, the metal-organic chemical vapor deposition (MOCVD) method. Additionally, these authors demonstrated the use of highly efficient CIS solar cells without applying a buffer layer, achieving a 7.39% power conversion efficiency.…”