Characterization of Mn-doped 3C-SiC prepared by ion implantation

Takano, Fumiyoshi; Wang, Wenhong; Akinaga, H.; Ofuchi, Hironori; Hishiki, Shigeomi; Ohshima, Takeshi

doi:10.1063/1.2709749

Cited by 22 publications

(10 citation statements)

References 16 publications

(5 reference statements)

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“…Thus, one can conclude that the electronic structure of Mn in 3C-SiC is similar to that in Mn 5 Si 2 :C, consistent with the result of the TEM study which has demonstrated the existence of Mn 5 Si 2 -derived clusters in 3C-SiC. [11] We have also studied the valence-band electronic states by Mn 2p-3d RPES measurements. RPES is a powerful tool to investigate the electronic structure of doped Mn ions in DMS because the resonance enhancement of the Mn 3d partial density of states (PDOS) enables us to extract it from the valence band.…”

supporting

confidence: 87%

“…Recently, Takano et al [11] have reported ferromagnetism in Mn-implanted 3C-SiC (3C-SiC:Mn) and a T C of 245 K has been observed. In their report, high resolution transmission electron microscopy (HRTEM) and selected-area diffraction (SAD) measurements have revealed that cluster precipitations occurred in 3C-SiC:Mn and that electron diffraction from the cluster region showed superposed patterns of Mn 5 Si 2 and 3C-SiC.…”

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confidence: 99%

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Soft X-ray Absorption and Photoemission Studies of Ferromagnetic Mn-Implanted 3C-SiC

Song¹,

Kobayashi²,

Hwang³

et al. 2008

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We have performed x-ray photoemission spectroscopy (XPS), x-ray absorption spectroscopy (XAS), and resonant photoemission spectroscopy (RPES) measurements of Mn-implanted 3C-SiC (3C-SiC:Mn) and carbon-incorporated Mn5Si2 (Mn5Si2:C). The Mn 2p core-level XPS and XAS spectra of 3C-SiC:Mn and Mn5Si2:C were similar to each other and showed gintermediateh behaviors between the localized and itinerant Mn 3d states. The intensity at the Fermi level was found to be suppressed in 3C-SiC:Mn compared with Mn5Si2:C. These observations are consistent with the formation of Mn5Si2:C clusters in the 3C-SiC host, as observed in a recent transmission electron microscopy study.

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supporting

confidence: 87%

mentioning

confidence: 99%

Soft X-ray Absorption and Photoemission Studies of Ferromagnetic Mn-Implanted 3C-SiC

Song¹,

Kobayashi²,

Hwang³

et al. 2008

jjap

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“…Substitutional doping with TMs (e.g. Cr, Mn, Fe) has also been considered in the context of dilute magnetic semiconductors [10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Lattice location of implanted transition metals in 3C–SiC

Costa

Wahl

Correia

et al. 2017

J. Phys. D: Appl. Phys.

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We have investigated the lattice location of implanted transition metal (TM) 56 Mn, 59 Fe and 65 Ni ions in undoped single-crystalline cubic 3C-SiC by means of the emission channeling technique using radioactive isotopes produced at the CERN-ISOLDE facility. We find that in the room temperature as-implanted state, most Mn, Fe and Ni atoms occupy carbon-coordinated tetrahedral interstitial sites (T C). Smaller TM fractions were also found on Si substitutional (S Si) sites. The TM atoms partially disappear from ideal-T C positions during annealing at temperatures between 500 °C and 700 °C, which is accompanied by an increase in the TM fraction occupying both S Si sites and random sites. An explanation is given according to what is known about the annealing mechanisms of silicon vacancies in silicon carbide. The origin of the observed lattice sites and their changes with thermal annealing are discussed and compared to the case of Si, highlighting the feature that the interstitial migration of TMs in SiC is much slower than in Si.

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“…The magnetic properties of SiC doped with transition metals have been studied theoretically, and the results, although controversial in some cases, suggest the dependence of the magnetism on the site occupation of the metallic ions [5,6]. The interpretations of the experimental results, on the other hand, are complicated by the formation of new phases or clustering of the impurities which could be the origin of the magnetic properties [7,8].…”

Section: Introductionmentioning

confidence: 99%