1989
DOI: 10.1109/22.17456
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Characterization of microstrip lines near a substrate edge and design formulas of edge-compensated microstrip lines (MMICs)

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Cited by 21 publications
(5 citation statements)
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“…In the low-frequency limit, i.e. 0.1 GHz, the data obtained by the proposed method are in excellent agreement with those reported by Yamashita et al using a quasi-TEM approach [32].…”
Section: B Microstrip Proximity Effectssupporting
confidence: 89%
“…In the low-frequency limit, i.e. 0.1 GHz, the data obtained by the proposed method are in excellent agreement with those reported by Yamashita et al using a quasi-TEM approach [32].…”
Section: B Microstrip Proximity Effectssupporting
confidence: 89%
“…Typical values for parasitic impedances of such short wires at microwave frequencies have been reported in [31]–[32]. Estimates for the fringing capacitance of a microstrip line located at the edge of a dielectric substrate are also reported in [33]. From these studies, we obtained initial approximate values for the parasitic R , L , and C elements used in the circuit model.…”
Section: Methods Of Dielectric Characterizationmentioning
confidence: 99%
“…The estimated values for induced parasitic impedances for the air gaps and defection in the edge-mounted connector at microwave frequency ranges have been studied before (Lee 1995;Yun and Lee 1995). Previous studies also suggested an estimate of fringing capacitance at the end of the dielectric substrate (Yamashita et al 1989). Guided by these previous studies, reasonable initial values of the parasitic L, C, and R elements were first set in the circuit.…”
Section: Transmission Line Methods Characterizationsmentioning
confidence: 95%