Characterization of MeV Ion-Irradiated SiC_f/SiC Composites Prepared with Different Methods

Abstract

To estimate the ion-irradiation effect on various types of SiCf/SiC composites, a silicon self-ion irradiation was performed at temperatures of 600 °C and 1200 °C and at doses of 5 dpa and 20 dpa, respectively. These SiCf/SiC composites were prepared by different processes such as CVI (chemical vapor infiltration), WA-CVI (SiC whisker assisted CVI) and hot-pressing (HP) method. Hardness was measured by a nano-indentation tester and microstructural changes were observed by TEM with SAD(selected area diffraction) technique for the specimens prepared by FIB (Focused Ion Beam) milling. The damage dose was calculated by the SRIM2003 code and then compared with microstructureal observation.

Optical and structural properties of 6H–SiC irradiated by coimplantation

“…As a potential candidate for high temperature, high power and high frequency devices material, silicon carbide (SiC) has been extensively studied for decades due to its excellent properties such as high thermal conductivity, extremely high hardness, high break down electric field and wide band gap [1,2]. Furthermore, SiC has such good properties as high temperature stability, chemical inertness and small neutron capture cross-section that it is considered as a potential material used as cladding material for gas-cooled fission reactors and structural material for fusion reactors [3][4][5].…”