Characterization of MBE grown II–VI semiconductor thin layers by X-ray interference

Prior, K. A.; Tang, Xin; O'Donnell, C B; Bradford, C.; David, Lamuel; Cavenett, B.C.

doi:10.1016/s0022-0248(02)02431-4

Cited by 17 publications

(19 citation statements)

References 14 publications

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“…At this temperature, little of the impinging Zn flux is incorporated into the growing layer. Initial characterisation of these structures was by X-ray Interference (XRI) measurements of multilayers of the form ZnSe (50 nm) / MgS / ZnSe (50 nm) [15]. In these structures, the thin MgS layer, which has a different lattice constant from the ZnSe, causes strong modulation of the X-ray diffraction patterns.…”

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Growth by MBE and characterization of metastable group II sulphides

Prior

Bradford

David

et al. 2004

Physica Status Solidi (b)

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Many group II sulphides semiconductors have the rocksalt structure as their stable crystal structure. In the case of MgS and MnS it has been demonstrated that these compounds can be grown in the metastable zinc blende structure. Recently, at Heriot-Watt we have shown that a simple MBE growth procedure can be used to increase the thickness of these metastable layers to over 130 nm. In this paper, we summarise some of the results we have obtained and describe some of the structures which we have grown using these materials. The aim is to demonstrate that the growth method is simple, and that MgS in particular is a material with useful properties that can be incorporated into a variety of structures. Finally, we describe some potential uses of these compounds which we have not yet explored, and suggest other compounds which may be successfully grown with this method.1 Introduction It is possible, using a variety of methods, to produce compounds in crystal states which are not their lowest energy configurations. Perhaps the best-known example of this is carbon, where the well-known diamond structure is metastable with respect to the graphite structure. In the case of II-VI compounds, using thin film growth techniques such as MBE and MOCVD it is possible to grow compounds and alloys in the zinc blende (ZB) phase when this is not the lowest energy state. Examples are the growth of CdSe [1] and CdS [2] on (100) oriented substrates where the fourfold periodicity of the underlying layer causes adoption of the ZB phase rather than the lower energy wurtzite phase. II-VI compounds are different to III-Vs in the variety of crystal structures that they can adopt. In addition to ZB and wurtzite, the NaCl (rocksalt) structure is found. The lowest energy crystal structure which is adopted can be related to the ionicity f i of the compound and for f i < 0.625 II-VI compounds adopt the ZB structure [3]. Above this value the wurtzite structure occurs, with a transition to the rocksalt structure when f i < 0.78 [4].Unlike the compounds which have wurtzite as their stable phase that can be made to adopt the ZB structure on (001) surfaces, there is no symmetry requirement which can force the adoption of ZB instead of rocksalt. In this case both structures are cubic, and the differences are that atoms incorporated into a ZB layer have 4 nearest neighbours instead of 6 as is found in the rocksalt structure.In recent years, effort has gone in to exploring the growth of metastable ZB compounds, particularly MgS and MnS, which have similar lattice constants to GaAs. MgS is of particular interest as its Philips' ionicity is 0.786, placing it close to the rocksalt stability boundary [5]. Initial attempts to grow MgS by MBE produced ZB layers only 0.96 nm thick before changes in the RHEED pattern were observed which were believed to correspond to a change in the crystal structure to rocksalt [6]. Subsequent MOCVD growth obtained layers up to 10 nm thick in the ZB crystal structure [7] which were of high quality and could be incorporated in MgS...

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Growth by MBE and characterization of metastable group II sulphides

Prior

Bradford

David

et al. 2004

Physica Status Solidi (b)

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“…First, a set of GaAs/ZnSe (50 nm)/ZnMgSSe (d nm)/ZnSe (50 nm) samples were grown with d varied from 6 to 17 nm for analysis by X-ray interference (XRI) [12,13]. The thicknesses of the layers in these samples were such that they could be compared directly with an almost identical set of samples grown previously for analysis of ZnSe/MgS/ZnSe layers by XRI [6,14].…”

Section: Methodsmentioning

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A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties

Moug

Bradford

Izdebski

et al. 2009

Journal of Crystal Growth

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“…In order to determine the lattice parameter of ZB CrS, a series of samples containing Mn 1-x Cr x S layers were grown for X-Ray Interference (XRI) [7] measurements. The samples all had the same structure, GaAs (sub)/ZnSe/MnCrS/ZnSe.…”

Section: Growth Proceduresmentioning

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Determination of the lattice constant of CrS from Mn_1–xCr_xS MBE epitaxial layers

David

Prior

2006

Physica Status Solidi (b)

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A series of Mn1–x Crx S epitaxial structures have been grown with the composition ZnSe/Mn1–x Crx S/ZnSe with varying x . X‐ray Interference measurements were used to determine the layer thicknesses and compositions, and by varying the lattice parameter of CrS an improved fit was obtained. The lattice parameter of CrS was found to be 5.387 ± 0.025 Å. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Characterization of MBE grown II–VI semiconductor thin layers by X-ray interference

Cited by 17 publications

References 14 publications

Growth by MBE and characterization of metastable group II sulphides

Growth by MBE and characterization of metastable group II sulphides

A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties

Determination of the lattice constant of CrS from Mn_1–xCr_xS MBE epitaxial layers

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Characterization of MBE grown II–VI semiconductor thin layers by X-ray interference

Cited by 17 publications

References 14 publications

Growth by MBE and characterization of metastable group II sulphides

Growth by MBE and characterization of metastable group II sulphides

A comparison of ZnMgSSe and MgS wide bandgap semiconductors used as barriers: Growth, structure and luminescence properties

Determination of the lattice constant of CrS from Mn1–xCrxS MBE epitaxial layers

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Determination of the lattice constant of CrS from Mn_1–xCr_xS MBE epitaxial layers