Characterization Of Material And Optical Effects In Annealed, Proton Irradiated N-Type GaAs

Zavada, J. M.; Jenkinson, H. A.; Sarkis, R. G.; Wilson, R. G.; Sadana, D. K.

doi:10.1117/12.946485

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Ge Hydrogen Is One Of the Four Dominant Neutral Impurities I1

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1989

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“…This is a result of deep-level defect introduction related to implantation damage, and not because of carrier passivation. For a sufficient dose (near 1015 cm-2), platelet defects are formed upon annealing above 500"C. [80][81][82][83] Acceptor passivation is observed in AIGaAs, CdTe and ZnTe after hydrogen incorporation, and donor passivation in Al,Ga, -/IS as seen over the entire range of x values. Once again, no direct information has been reported for the stable states or positions of hydrogen in these materials.…”

Section: Ge Hydrogen Is One Of the Four Dominant Neutral Impurities Imentioning

confidence: 99%

States of hydrogen in crystalline semiconductors

Pearton

Stavola

Corbett

1989

Radiation Effects and Defects in Solids

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The stable configurations of hydrogen in undoped, and in r t and ptype semiconductors are reviewed. We compare the experimentally determined configurations with theoretical predictions made by a variety of calculational methods. In undoped Si, as an example, hydrogen appears to occupy a near-bond-centered (BC) site between neighbouring Si atoms with a secondary local minimum in energy occurring at a tetrahedral interstitial (T) site. In B-doped, ptype Si, hydrogen at a near BC site accounts for acceptor passivation. By contrast in n-type Si, hydrogen at the antibonding (AB) position appears to be responsible for donor passivation. The possible configurations in other semiconductors (Ge, GaAs and AIGaAs) are also summarized.

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Section: Ge Hydrogen Is One Of the Four Dominant Neutral Impurities Imentioning

confidence: 99%