1992
DOI: 10.1117/12.130341
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Characterization of mask fabrication for submicron geometries using a shaped vector electron-beam system

Abstract: The requirementsfor maskfabrication have increased dramatically with recent advances in lithographic techniques and new i-line, x-ray and deep UV systems. For example, phase shifting masksfor 5x steppers require submicron phase shifters, tight critical dimension control andpattern alignment capabilities. X-ray steppers and other lx technologies require subhalfmicron resolution and even tighter critical dimension control with excellent dimensional linearity. These requirements approach the limit of capabilities… Show more

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